Mr. Wolfgang Harnisch Profile

Wolfgang Harnisch

Director at Carl Zeiss SMT GmbH

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Author

Publications (14)

Proceedings Article | 23 March 2012 Paper

Closing the infrastructure gap: status of the AIMS EUV project

Dirk Hellweg, Markus Weiss, Sascha Perlitz, Jan Hendrik Peters, Wolfgang Harnisch, Michael Goldstein

Proceedings Volume 8322, 83220L (2012) https://doi.org/10.1117/12.918691

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Scanners, Inspection, Manufacturing, Semiconducting wafers, Multilayers, Mirrors, Metrology

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Proceedings Article | 14 October 2011 Paper

Development status and infrastructure progress update of aerial imaging measurements on EUV masks

Sascha Perlitz, Wolfgang Harnisch, Ulrich Strößner, Jan Hendrik Peters, Markus Weiss, Dirk Hellweg

Proceedings Volume 8166, 816610 (2011) https://doi.org/10.1117/12.899038

KEYWORDS: Extreme ultraviolet, Photomasks, Manufacturing, Plasma, Extreme ultraviolet lithography, Airborne remote sensing, Light sources, Metrology, EUV optics, Electron beam lithography

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Proceedings Article | 5 April 2011 Paper

AIMS EUV: the actinic aerial image review platform for EUV masks

Dirk Hellweg, Johannes Ruoff, Alois Herkommer, Joachim Stühler, Thomas Ihl, Heiko Feldmann, Michael Ringel, Ulrich Strößner, Sascha Perlitz, Wolfgang Harnisch

Proceedings Volume 7969, 79690H (2011) https://doi.org/10.1117/12.879422

KEYWORDS: Extreme ultraviolet, Scanners, Extreme ultraviolet lithography, Photomasks, EUV optics, Reticles, Projection systems, Optics manufacturing, Charge-coupled devices, Artificial intelligence

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Proceedings Article | 2 April 2011 Paper

Concept and feasibility of aerial imaging measurements on EUV masks

Sascha Perlitz, Wolfgang Harnisch, Ulrich Strößner, Heiko Feldmann, Dirk Hellweg, Michael Ringel

Proceedings Volume 7985, 79850U (2011) https://doi.org/10.1117/12.895208

KEYWORDS: Extreme ultraviolet, Photomasks, Scanners, Extreme ultraviolet lithography, Reticles, Particles, Lithography, Metrology, Airborne remote sensing, Electromagnetic coupling

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Proceedings Article | 20 March 2010 Paper

Actinic review of EUV masks

Heiko Feldmann, Johannes Ruoff, Wolfgang Harnisch, Winfried Kaiser

Proceedings Volume 7636, 76361C (2010) https://doi.org/10.1117/12.848380

KEYWORDS: Extreme ultraviolet, Photomasks, Mirrors, Scanners, Extreme ultraviolet lithography, EUV optics, Metrology, Zone plates, Photons, Imaging systems

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Proceedings Article | 21 June 2006 Paper

Printability study with polarization based AIMS fab 193i to investigate mask polarization effects

Axel Zibold, Ulrich Stroessner, Eric Poortinga, Rainer Schmid, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch

Proceedings Volume 6281, 628108 (2006) https://doi.org/10.1117/12.692728

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Transmittance, Phase shifts, Printing, Immersion lithography, Semiconductors

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Proceedings Article | 20 May 2006 Paper

First results for hyper NA scanner emulation from AIMS 45-193i

Axel Zibold, Ulrich Strössner, Norbert Rosenkranz, Andrew Ridley, Rigo Richter, Wolfgang Harnisch, Alvina Williams

Proceedings Volume 6283, 628312 (2006) https://doi.org/10.1117/12.681863

KEYWORDS: Scanners, Polarization, Photomasks, Semiconducting wafers, Reticles, Binary data, Immersion lithography, Printing, Optical testing, Lithography

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Proceedings Article | 24 March 2006 Paper

Printability study with polarisation capable AIMS™ fab 193i to study polarisation effects

Axel Zibold, Ulrich Stroessner, Andrew Ridley, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch, Eric Poortinga, Rainer Schmid, Joost Bekaert, Vicky Philipsen, Lieve Van Look, Peter Leunissen

Proceedings Volume 6152, 61522F (2006) https://doi.org/10.1117/12.656235

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Printing, Critical dimension metrology, Transmittance, Binary data, Polarizers

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Proceedings Article | 28 June 2005 Paper

Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

Axel Zibold, E. Poortinga, H. v. Doornmalen, R. Schmid, T. Scherubl, W. Harnisch

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617508

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Polarization, Liquids, Reticles, Critical dimension metrology, Binary data, Imaging systems, Refractive index

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Proceedings Article | 10 May 2005 Paper

Advances in hardware, software, and automation for 193nm aerial image measurement systems

Axel Zibold, R. Schmid, A. Seyfarth, M. Waechter, W. Harnisch, H. Doornmalen

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599715

KEYWORDS: Photomasks, Semiconducting wafers, Imaging systems, Reticles, Critical dimension metrology, Optical proximity correction, Lithographic illumination, Scanners, Lithography, 193nm lithography

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A new, second generation AIMS fab 193 system has been developed which is capable of emulating lithographic imaging of any type of reticles such as binary and phase shift masks (PSM) including resolution enhancement technologies (RET) such as optical proximity correction (OPC) or scatter bars. The system emulates the imaging process by adjustment of the lithography equivalent illumination and imaging conditions of 193nm wafer steppers including circular, annular, dipole and quadrupole type illumination modes. The AIMS fab 193 allows a rapid prediction of wafer printability of critical mask features, including dense patterns and contacts, defects or repairs by acquiring through-focus image stacks by means of a CCD camera followed by quantitative image analysis. Moreover the technology can be readily applied to directly determine the process window of a given mask under stepper imaging conditions. Since data acquisition is performed electronically, AIMS in many applications replaces the need for costly and time consuming wafer prints using a wafer stepper/ scanner followed by CD SEM resist or wafer analysis. The AIMS fab 193 second generation system is designed for 193nm lithography mask printing predictability down to the 65nm node. In addition to hardware improvements a new modular AIMS software is introduced allowing for a fully automated operation mode. Multiple pre-defined points can be visited and through-focus AIMS measurements can be executed automatically in a recipe based mode. To increase the effectiveness of the automated operation mode, the throughput of the system to locate the area of interest, and to acquire the through-focus images is increased by almost a factor of two in comparison with the first generation AIMS systems. In addition a new software plug-in concept is realised for the tools. One new feature has been successfully introduced as "Global CD Map", enabling automated investigation of global mask quality based on the local determination of wafer level CD at multiple pre-defined measurement points on the mask. This feature supports both reticle manufacturing in mask shops and lithographic process analysis in the Wafer Fab environment. Based on the newly developed software the AIMS can speed up mask development in both the design process and OPC verification.

Proceedings Article | 27 January 2005 Paper

Using the aerial image measurement technique to speed up mask development for 193-nm immersion and polarization lithography

Axel Zibold, Wolfgang Harnisch, Thomas Scheruebl, Norbert Rosenkranz, Joern Greif

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.576948

KEYWORDS: Photomasks, Polarization, Scanners, Semiconducting wafers, Reticles, Liquids, Manufacturing, Tolerancing, Neodymium, Lithography

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Proceedings Article | 20 August 2004 Paper

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

Axel Zibold, Rainer Schmid, B. Stegemann, Thomas Scheruebl, Wolfgang Harnisch, Yuji Kobiyama

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557811

KEYWORDS: Photomasks, Semiconducting wafers, Pellicles, Reticles, Inspection, Lithography, Scanners, Particles, Crystals, Polarization

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Proceedings Article | 24 May 2004 Paper

Aerial image measurement technique for fast evaluation of 193-nm lithography masks

Axel Zibold, Thomas Scheruebl, Wolfgang Harnisch, Robert Brunner, J. Greif

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533021

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Scanners, Reticles, Polarization, Phase shifts, Beam homogenizers, Lithographic illumination, Homogenization

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Proceedings Article | 28 May 2003 Paper

Performance of the aerial image measurement system for 157-nm lithography

Peter Kuschnerus, Thomas Engel, Wolfgang Harnisch, Claudia Hertfelder, Axel Zibold, Jan-Peter Urbach, Christof Schilz, Klaus Eisner

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.514958

KEYWORDS: Photomasks, Lithography, Lithographic illumination, Vacuum ultraviolet, Charge-coupled devices, CCD image sensors, Binary data, Reticles, Image quality, CCD cameras

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Showing 5 of 14 publications

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