The high reliability and efficiency of high-power conduction cooled annular diode laser stack are critical to the side pump solid-state laser head in a DPSSL system. To obtain the higher reliability and efficiency, a high-power conduction cooled annular diode laser stack packaged by AuSn hard solder has been presented. The CTE-matched wedge-shaped submounts are designed and applied in bonding GaAs-based diode laser bars with the cavity length of 1.5 mm on a conduction cooled annular heatsink. The mechanical structural design and thermal design are conducted to evaluate the capability of the annular packaging. The bar bonding process is optimized to reduce the thermal stress and improve the spectral performances of this package. After optimizing the multiple bar bonding process, a series of 808nm QCW ⪆2000W annular diode laser stacks with a narrow spectral width are achieved, which has the average FWHM and FW90%Energy value of approximately 2.6 nm and approximately 3.6 nm at 65 °C, respectively. Also, the FW90% Energy value at 65 °C is significantly reduced from 8.03 nm to 3.84 nm. Of particular importance is the elimination of the left shoulder of the spectral profile after optimizing the multiple bar bonding process.
A high peak power annularly-stacked laser diode pump has been designed and manufactured for a solid state laser (SSL), which is constructed by 12 single annular stacks composed of 3-bar laser diode (LD) submodules. High peak power and high wavelength uniformity have been considered. Macro channel cooling has been used during the operation of the annular stacks, at typical coolant flow rate of 2L/min. Heat dissipation and stress of a single annular stack have been simulated by finite element software, which shows high temperature uniformity of 3-bar submodules (plus or minus 0.5℃) and low package stress (11.8MP).
The peak power of the annularly stacked laser diode pump has reached 234kW at a peak current of 450A or less. A high uniformity of centroid wavelength (802 plus or minus1nm) with a full width at half maximum (FWHM) of 4nm has been measured. More than 24 million shots have been verified for the 3-bar LD submodules.
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