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Yifan Wang
at Univ of California Santa Barbara
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Publications (1)
Proceedings Article | 5 March 2021 Presentation
III-nitride strain relaxation enabled by porous GaN for optoelectronic applications
Shubhra Pasayat, Chirag Gupta, Matthew Wong, Ryan Ley, Yifan Wang, Stacia Keller, Steven DenBaars, Shuji Nakamura, Umesh Mishra
Proceedings Volume 11706, 117060C (2021) https://doi.org/10.1117/12.2577008
KEYWORDS: Gallium nitride, Indium gallium nitride, Optoelectronics, Indium, Quantum wells, Light emitting diodes, Display technology, Aluminium gallium indium phosphide, Green light emitting diodes
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