Conventional metalens design is based on the library where phases and transmissions of the meta-atoms are calculated with the periodic boundary condition. And the most suitable meta-atom is picked up from the library ignoring its environment. However, the coupling between adjacent meta-atoms produces the phase error, leading to low efficiency and scattering of the metalens. We proposed a method of numerical optimization of the wavefront error by adjusting the meta-atoms size, which reduces phase errors leading to higher efficiency compared to the conventional metalens design. This method is scalable for a large size metalens and for metalens with an arbitrary phase profile.
We introduce well-developed optical proximity correction (OPC) techniques to the metasurface-based flat optics manufacturing process. Flat optics, formed by subwavelength scale nanostructure pillar (nanopillar) array, so called metasurface, has become promising substitutes for conventional bulky optical components. For its manufacturing, photolithography is preferable rather than the electron beam lithography (EBL) technique because of its time and cost effectiveness for mass manufacturing. However, the required feature size and pitch of the metasurface for the visible light is approaching the process limit of the ArF immersion lithography. It results in critical dimension (CD) errors due to optical proximity effect and could result in efficiency degradation of the flat optics. In the semiconductor manufacturing industry, OPC based on process modelling and numerical computation has been developed for the last few decades to control the CD on the wafer. Here, a machine learning (ML) model is constructed to avoid the time consumption of the conventional OPC method without losing the accuracy. Various pitches of flat optics metalens, from 465 nm to 160 nm, has been studied for the implementation of the ML OPC. The root mean square (RMS) CD errors < 1 nm and the CD accuracies < 6 nm can be achieved. The CD error percentages over the pillar diameters < 6 % is observed and the improvement of CD error and CD accuracy compared to rule based OPC in small pitches of metalens is demonstrated.
Lithium niobate (LN) has experienced significant developments during past decades due to its versatile properties, especially its large electro-optic (EO) coefficient. For example, bulk LN-based modulators with high speeds and a superior linearity are widely used in typical fiber-optic communication systems. However, with ever-increasing demands for signal transmission capacity, the high power and large size of bulk LN-based devices pose great challenges, especially when one of its counterparts, integrated silicon photonics, has experienced dramatic developments in recent decades. Not long ago, high-quality thin-film LN on insulator (LNOI) became commercially available, which has paved the way for integrated LN photonics and opened a hot research area of LN photonics devices. LNOI allows a large refractive index contrast, thus light can be confined within a more compact structure. Together with other properties of LN, such as nonlinear/acousto-optic/pyroelectric effects, various kinds of high-performance integrated LN devices can be demonstrated. A comprehensive summary of advances in LN photonics is provided. As LN photonics has experienced several decades of development, our review includes some of the typical bulk LN devices as well as recently developed thin film LN devices. In this way, readers may be inspired by a complete picture of the evolution of this technology. We first introduce the basic material properties of LN and several key processing technologies for fabricating photonics devices. After that, various kinds of functional devices based on different effects are summarized. Finally, we give a short summary and perspective of LN photonics. We hope this review can give readers more insight into recent advances in LN photonics and contribute to the further development of LN related research.
Optically resonant dielectric nanostructures is a new direction in nanophotonic research which gives a strong promise to compliment or substitute plasmonics in many potential application areas [1]. The main advantages of resonant dielectric nanostructures over conventional plasmonics are low losses, wide range of applicable dielectric materials and strong magnetic resonant response. So far most of research in this field has been conducted with silicon as a material for nanostructures due to its one of the highest value of refractive index at optical frequencies and CMOS compatibility. However, while silicon is an excellent material of choice for operation in the near-IR spectral range its applicability for visible frequencies is limited by increasing losses inside the material. Also, being an indirect bandgap semiconductor it is not a suitable material for making active nanoantenna devices. For these reasons in recent studies research focus starts shifting towards other appropriate materials such as III-V semiconductors, e.g. GaAs or GaP, and wide-bandgap semiconductors such as TiO2. In this presentation we will discuss applicability of different dielectric/semiconductor material platforms for obtaining resonant nanoantennas and metasurfaces operating in the visible frequency range. We will first show that titanium dioxide metasurfaces can be designed to obtain sharp resonances and full phase control at all three RGB wavelengths through Huygens’ metasurface approach, which pave the way towards realization of thin multi-layer metasurfaces with multi-colour operation. Then we will introduce a new III-V material platform based on GaN, which is highly transparent through the whole visible spectrum, and show high-efficiency operation of GaN metasurfaces in the blue and green parts of the visible spectrum. Finally we will discuss active nanoantennas based on GaAs and show the path towards achieving laser emission from resonant semiconductor nanoantenna structures.
References:
1) A. I. Kuznetsov et al., “Optically resonant dielectric nanostructures”, Science 354, aag2472 (2016).
Optically resonant dielectric nanostructures represent a new and rapidly developing research direction in nanophotonics [1]. They show plenty of useful functionalities and can complement or even substitute resonant plasmonic nanoparticles for many potential application directions. The main advantages over conventional plasmonics are low losses, wide range of applicable dielectric materials and strong magnetic resonant response. In particular, the last feature opens a broad range of opportunities to control light scattering, transmission, reflection and phase characteristics through designed interference between electric and magnetic resonant modes. This has already led to demonstrations of low-loss dielectric Huygens’ metasurfaces operating with very high efficiencies in transmission mode and generalized Brewster effect showing unconventional behaviour of dielectric metasurface in reflection mode [1]. In this presentation, we will review recent magnetic resonant phenomena obtained with high-index dielectric nanoantennas and metasurfaces and show how this might lead to new functionalities, which cannot be achieved neither with conventional metasurface approaches nor with conventional bulk optics. In particular, we demonstrate how the resonance interference effect can be used to control energy distribution between diffraction orders in a nanoantenna array, which leads to light bending at very high angles of >82 degrees with efficiency >50%. This property is used to design and experimentally demonstrate flat lenses having a free-space numerical aperture (NA) of >0.99, which strongly exceeds NA of existing flat lenses and bulk optics analogues. Applications of these new, ultra-high NA, flat dielectric lenses will also be discussed.
References:
1) A. I. Kuznetsov et al., “Optically resonant dielectric nanostructures”, Science 354, aag2472 (2016).
KEYWORDS: Particles, Magnetism, Dielectrics, Dielectric polarization, Electromagnetism, Plasmonics, Scattering, Data storage, Current controlled current source
Metasurfaces are planar arrangements of elements that are designed to present a particular response to an incident electromagnetic field. Due to their ability to control at will the phase, polarization and amplitude of the reflected and/or transmitted waves at a subwavelength scale they have gathered a great deal of attention among the research community.
Although the first metasurface proposals were realized with plasmonic particles, the focus is now turning into all-dielectric approaches, in order to mitigate losses and increase the device efficiencies. Besides the obvious advantage of loss reduction, when high-index, subwavelength particles are considered a whole new family of resonant, magnetic-like modes is accessible. This new set of modes, which cannot be excited in simple metallic particles, brings additional functionalities for these metasurfaces, as will be shown in this talk.
We will focus on the interesting effects that arise as a consequence of the far-field interference between electric and magnetic modes excited in the dielectric particles forming the metasurface and the strong modification of their scattering patterns as a consequence of this interference. In particular, we will show the possibility to realize so called ideal Huygens’ secondary sources to generate a perfectly transmissive metasurface with full phase control. We will also show that these metasurfaces support a generalized version of Brewster’s effect, in which the phenomenon is not restricted to a particular angle or polarization of incidence but can be tuned at will, and the different implications that this concept has.
We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
3D-FDTD is used to compute the electromagnetic response of various plasmonic nanostructures. Results of
computation and simulation are used to design the contact area of the photo-catalytic reactors. Novel nano-fabrication
techniques are developed to implement large surface area of plasmonic nanostructures for photo-catalytic reactors.
Measurement and analysis of the photo-catalytic process happened in the newly designed photo-chemical reactors clearly
demonstrate better efficiency of some photo-catalytic chemical process such as the decomposition of the Methyl Orange
to carbon dioxide and water.
Au-SiO2 nanocomposite thin film is fabricated reproducibly by co-sputtering method with the size of Au nano particles around 2 to 10 nm. TEM images display the irregular shape Au nanoparticles are embedded in SiO2 thin film with random distribution. A surface plasmon absorption peak of Au nanoparticles is found in absorption spectra. The nonlinear optical properties are measured by confocal Z-scan method with a sub-nanosecond pulse laser (λ=532nm, pulse width 0.71ns, repetition rate 15.79kHz) and high-numerical-aperture objective lens (NA=0.55). Results of the Z-scan show nonlinear optical properties and enhanced transmittance at the focusing position of nanocomposite Au-SiO2 films. The transmittance can be more than 135% for a 15-nm-thick Au-SiO2 nanocomposite thin film with an average grain size of around 5 nm.
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