In this paper, in order to identify and trace the single silicon wafer, the robustness of wafer identification using micro ID on polished silicon wafers is investigated. A dot-matrix encoding scheme for forming reliable, machine-readable identifying codes on the wafer is used. The quality of dot concerning marking depth, the dot size, robustness of code detection by automatic vision inspection is investigated. The topography and the depth, the dot size are evaluated with VHX6000 microscope and Bruker Contour GT 3D Surface Profiler. Codes either alphanumeric characters or data matrix codes with different the topography and the depth are detected by the In-Sight 1741 image Code Reader. Dot diameter ranges from 15.4 to 70um and dot depth ranging from 0.287um to 3.797 um are achieved. The minimum readable Data Matrix codes is 2.33*0.53mm,the average read rates of 100% are already achieved with the Data Matrix codes With 3.88*0.65mm.
Silicon wafers are the raw material for chip manufacturing, and the identification code is formed on the surface by laser engraving, which is an important part of the traceability chip management cycle. In this paper, the 532nm Nd: YVO4 laser is used to build a laser marking system, and the stability and energy distribution of the laser light source are analyzed. The laser marking system is used to mark the surface of the silicon wafer with dot matrix, and the white light interferometer is used to analyze and measure the ablation pit at a single point, and the process effect of the system on the wafer marking is evaluated from the depth of the single point. In this paper, the process research of silicon wafer marking is carried out by changing the laser power, PRF (pulse repetition frequency), the number of laser pulse and defocus amount of the system. The research results show that: 1) 532nm Nd: YVO4 laser has the highest energy stability at the maximum current and 20 kHz. 2) Under the condition that other system parameters such as power and repetition frequency remain unchanged, the depth of marking can be improved by increasing the number of pulses. 3) Under the condition that other parameters of the system such as the number of pulses and power remain unchanged, the balance between marking quality and marking efficiency can be achieved by optimizing the laser repetition frequency. 4) Under the condition that other parameters of the system such as power, PRF, and the number of pulses remain unchanged, there is a certain range of power. The change of defocus amount is the most sensitive, and with the increase of defocus amount, the dot depth and aperture first increase and then decrease.
High borosilicate glass has the advantages of high light transmittance, good mechanical performance, chemical stability and thermal stability. It is widely used in daily use, chemistry, architecture, electronics, instruments and other fields. There is a large number of identification requirements in the application. In this paper, based on the 532nm wavelength laser, the marking process of high borosilicate glass is studied. The influence rule and mechanism of duty ratio, repetition frequency, marking speed and defocus amount on the marking effect are explored by single factor control variable method. The research results show that the four process parameters have an important impact on the integrity of the identification profile. Through the optimization of the process parameters, the process window of 532nm wavelength laser identification of high borosilicate glass is obtained, which realizes the good identification effect of the identification morphology and provides a reference for the green light identification of high borosilicate glass.
Pulsed lasers were used extensively in material processing including cutting, drilling and marking. The temporal shape and duration of the pulse were important in optimizing the material processing quality. The flexible parameters of MOPA pulsed fiber laser can offer a broad range of material response characteristics. In this report, a MOPA pulsed fiber laser was configured with pulse duration from 2 to 500 ns and PRF that ranged from single shot to 4000kHz.Pulse energy up to 1mJ to investigate independently the contributions of each of these parameters on the marking process of Si wafer. Various experiments were presented to require the high quality marking on Si wafer. Topography evolution pictures of dot were taken and the depths were measured. Experimental results showed that single pulse energy had a significant influence on the threshold of the visible mark. Pulse numbers had more impact on the dot topography. Pulse energy and pulse duration had more influence on the mark depth. In order to control finely the mark depth, single pulse energy and pulse numbers should be optimized.
The silicon material is very sensitive to the change of the laser, and a small change in energy will cause a relatively large change in the morphology of the mark. Therefore, it is a great challenge to produce uniform and high-quality laser marks on silicon wafers. A new Master Oscillator Power-Amplifier (MOPA) fiber laser with independently adjustable pulse width and frequency have a wide adjustable parameter window. In this paper, a new type of MOPA fiber laser is used to study the marking process on silicon wafers. By changing average power (defined by the active current set point), pulse repetition frequency (PRF) and pulse duration of the laser (i.e., the number of pulses), dot matrix marking on the wafer, using the Keyence VHX-6000 optical microscope to determine the cleanliness and surface topography of the wafer surface to evaluate. Studies have shown that the influence of the output instability of the fiber laser on the marking quality can be reduced by increasing the number of pulses under the condition of stable and low power. At the same time, the resolution of the single pulse energy of the laser is improved by changing the laser PRF, and then the control precision of the energy is improved, so as to realize the high-quality silicon wafer laser marking process with uniform and stable marking morphology.
In order to identify and trace the single silicon wafer, which improved quality control and assists in process improvement, laser marking of silicon wafers had been an industrial standard in semiconductor industry. The traditional laser making had the depth 5-20um and a significant amount of debris. In this paper, the topography quality and the depth the size of the dot were investigated by adjusting laser pulse energy, laser pulse numbers . The results showed that the depth of the dot increases proportionally with laser irradiation energy while there were significant differences in the topography of the dot with different interaction time of laser irradiation. A free-debris laser dot marking process with the depth less than 2um, the height of bump less than 0.6um, the range of diameter of dots from 20um to 100um was achieved.
Part surface roughness is an important index of part surface quality, and it has a great influence on the contrast of laser marking. The present study deals on the effect of single pulse energy on the roughness of laser direct part marking of aluminum alloy (2024) ,with the aim to find a relation between single pulse energy and roughness in term of both morphology and chemical composition. Firstly, the laser direct marking of Aluminum alloy (2024) was carried out on 1060nm MOPA laser, and then different pulse energies were measured by roughness detector. It is found that there is a nonlinear relationship between the roughness and the pulse energy, but the maximum value 8.12μm of roughness is obtained when the pulse energy is 0.13mJ. The surface morphology was observed by digital microscope system, and the composition and morphology was analyzed by energy dispersive spectrometer (EDS) and scanning electron microscope(SEM) results show that different pulse energy will cause obvious differences in the melting, vaporization and ablation degree of the marking surface, which affect the roughness of the marking surface.
Laser Direct Part Marking (DPM) technology is a marking technology that has proved to be feasible in the industrial environment, and can be highly automated and environmentally friendly. It has become the preferred method for completing product marking in industrial product traceability. In this paper, MOPA laser marking system with flexible control and wide adjustment range of laser parameters is used for experiment. According to ISO/IEC TR 29158 bar code technology standards, the influence of laser processing parameters(such as laser peak power, laser pulse energy, laser power, filling space, scan speed, etc.) on the quality (such as symbol level, symbol contrast, print growth, etc.)of laser direct marking DM symbol is studied. By optimizing the laser processing parameters, high-quality DM symbol on the surface of AL2024 is realized.
A portable laser-induced fluorescence detector based on module design, which includes an excitation source of 405nm fibre-coupled stable spectra diode laser,a fluorescence collection module based on a fibre fluorescence optical fibre probe with an improved confocal optical arrangement,a fluorescence analysis module of Mini Fiber Grating Spectrometer. The advantages of the detector is compact, small size, low cost, high sensitivity, easy to operate.The performance of the detector is evaluated by fluorescein sodium. Water Raman peak S / N is 935.67. LOD of fluorescein sodium was 1.9×10-11g/L.Correlation of the fluorescence intensity was 0.9998 with the concentration from 10-10 to 10-12 g/L, the linear dynamic range was over 3 order. RSD of the fluorescence wavelength and intensity repeatability was 0.14% and 3.36% respectively. It is concluded that the 405nm LIFD has highly sensitivity,good repeatability,a wide linear range.
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