InGaAsP photocathodes show great potential for near-infrared applications, particularly at 1.06 μm. In order to study the influence of Zn doping on the optoelectronic properties of In0.875Ga0.125As0.25P0.75, models of In0.875Ga0.125As0.25P0.75, In0.84375Ga0.125Zn0.03125As0.25P0.75 and In0.875Ga0.09375Zn0.03125As0.25P0.75 were constructed. The band structure, formation energy, Mulliken population and optical properties of the Zn doping crystals were calculated from first-principles. Results show that Zn doping reduces the stability of In0.875Ga0.125As0.25P0.75, and In atom is more inclined to be replaced by Zn atom due to In0.84375Ga0.125Zn0.03125As0.25P0.75 has the lower formation energy than In0.875Ga0.09375Zn0.03125As0.25P0.75. The covalency of In-As, In–P and GaP bonds is enhanced due to the Zn atom replacing In atom, but Zn atom replaces Ga atom only increases the covalency of Ga-P bond. After Zn doping, the Fermi levels of In0.84375Ga0.125Zn0.03125As0.25P0.75 and In0.875Ga0.09375Zn0.03125As0.25P0.75 appear in the valence band, indicating that they show p-type properties. Zn atom replacing In atom increases the bandgap, but Zn atom replacing Ga atom is just opposite. Compared to In0.875Ga0.125As0.25P0.75, doping Zn improves the carrier concentrations, causing the increase of valence band holes which are closely related to conductive behavior of Zn doped crystals. The optical properties of In0.84375Ga0.125Zn0.03125As0.25P0.75 and In0.875Ga0.09375Zn0.03125As0.25P0.75 are almost the same. The substitution of Zn atom for In or Ga atom in In0.875Ga0.125As0.25P0.75 improves the electron transition and increases the absorption coefficient in low energy side, but the metal reflective region shifts to lower energy side.
We present a probabilistic collaborative representation method under Bayesian framework for visual tracking. First, principal component analysis (PCA) basis vectors and squared templates are used to model the appearance of tracked object. Second, to decline the high complexity in traditional tracking methods via sparse representation, we demonstrate the mechanism of a probabilistic collaborative representation method and propose a fast method for computing the coefficients. Third, we introduce a PCA basis vectors update mechanism for the appearance change of the tracked object. Experiments on challenging videos demonstrate that our method can achieve better tracking results in terms of lower center location error and higher overlap rate.
To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed exponentially from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality
p-type Be-doped GaAs (100) substrate by MBE. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps to improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the exponential-doping GaAs photocathode samples reaches 1547uA/lm.
To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has
been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed gradiently from high to
low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was
grown on the high quality p-type GaAs (100) substrate by MBE with p-type Be doping. We have calculated the
band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which
helps improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of
the two exponential-doping GaAs photocathode samples with different thickness reaches 1228uA/lm and 1547uA/lm
respectively.
The exponential-doping structure was applied to prepare the transmission-mode GaAs photocathode, and spectral
response curves after high-temperature activation, low-temperature activation and the indium sealing process were
respectively measured by use of the on-line spectral response measurement system, to research into the practical effect of
the exponential-doping structure on cathode performance. The results show that a high photosensitivity ranging from 560
nm to 880 nm with an ascending trend can be obtained after the high-low temperature activation. In the region of longwave
threshold, there is a distinct inflexion indicating a better photoemission capability than the former uniform-doping
photocathodes. Besides, the spectral response curve in the whole response waveband, especially the long-wave region
obviously decreases after indium seal. Compared with the fitted surface electron escape probability after Cs-O activation,
it decreases after indium seal according to the quantum efficiency formula of exponential-doping transmission-mode
GaAs photocathodes. Based on the double dipole model, the reasons for the variation of spectral response shape are
explained on account of the relation between surface escape probability and the evolution of surface potential barrier
profile.
By use of self-developing more-information measurement instrument, stability under illumination of
transmission-mode GaAs photocathode sealed in the third generation intensifier was researched and analyzed. The
spectral response curves under ebb-illumination 10lx and strong-illumination 100lx were obtained with illumination time.
The results show that during initial several weak illuminations photocathode behaves no obvious decay and a maximum
sensitivity was achieved, while under intense illumination the sensitivity of photocathode began to decrease largely at the
first illumination. It was also found that under intense illumination the peak wavelength moved towards short-wave and
peak response decreased, which show that the ability of long-wave response of photocathode is decreased. The
performance parameters of GaAs photocathode were estimated by curve imitate. The result indicated that the variation of
surface escape probability with illumination time is the direct cause of instability of photocathode under illumination, at
the same time, it was found that the illumination increased the ion bombardment probability in GaAs tube, it was the
reason for the decline of the cathode sensitive. The Cs quantity on cathode surface and the purge degree of cathode
subassembly were the important factor to the cathode stability.
Based on the research of the standard second generation, the high capability third generation, the exceeding third
generation and the fourth generation, the spectral response of the third generation LLL was carried out using a
self-developing spectral response measurement instrument. Spectral response characteristics of third-generation LLL
tube were obtained, and the material performance parameters of GaAs photocathode were calculated by curve simulation
method. On-line measurement of GaAs photocathode after high-temperature activation and low-temperature activation
was carried out, the results showed that spectral response in the whole response waveband decreased after indium seal,
and long wave responsibility was most obviously influenced. Decrease was large, cut-off wavelength and peak value
wavelength move towards short-wave, peak response value and integral sensitivity decreased, and the final spectral
response curve became flat. By calculating photocathode parameters, it was found that indium seal, lead to the variations
of surface activation layers of photocathode, and the long wave responded and sensitivity decreased accordingly. The
influence factors on the surface activation layers during indium seal were also analyzed.
Photocathode based on GaAs/AlGaAs heterojunction has been applied broadly in night vision imaging intensifiers for its broad spectral response wavelength, high quantum efficiency and low dark current. Especially in recent years the extension of response wavelength to near infrared makes GaAs/AlGaAs applied in laser imaging. To obtain negative electron affinity GaAs photocathode with high performance, reasonable selection of performance parameters of GaAs material is required. In this paper on basis of photoemission model, analysis of the influences of diffusion length of minor carrier, recombination velocity at the interface of GaAs/AlGaAs and thickness of active GaAs layer on spectral response of GaAs photocathode were detailed, and the optimizing principle and methods of these parameters were proposed. Our measurement results of compositions distributions of GaAs/AlGaAs heterojunction are also given to demonstrate influences of material performance parameters.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.