The polarization characteristic of ocean or atmospheric optical sensor is one of the important factors affecting the accuracy of radiation measurement and quantitative inversion. Based on the theory of polarization aberration, the physical mechanism of polarization sensitivity is analyzed in this paper, and the relationship between polarization aberration and polarization sensitivity is revealed. Moreover, a method of calculating the polarization sensitivity based on the Muller matrix is proposed. The computational analysis model is established based on the polarization ray tracing algorithm. This method overcomes the shortcomings of the traditional single ray estimation method and definition method, and the accuracy and efficiency of calculation are greatly improved. Take a remote camera as an example, the polarization sensitivity is analyzed theoretically and experimental measurement. This method can be applied to the imaging optical system or the imaging spectrometer for polarization analysis.
Choosing an adequate initial design for optimization plays an important role in obtaining high-quality deep ultraviolet (DUV) lithographic objectives. In this paper, the grouping design method is extended to acquire initial configurations of catadioptric projection objective for DUV lithography. In this method, an objective system is first divided into several lens groups. The initial configuration of each lens group is then determined by adjusting and optimizing existing lens design according to respective design requirements. Finally, the lens groups are connected into a feasible initial objective system. Grouping design allocates the complexity of designing a whole system to each of the lens groups, which significantly simplifies the design process. A two-mirror design form serves as an example for illustrating the grouping design principles to this type of system. In addition, it is demonstrated that different initial designs can be generated by changing the design form of each individual lens group.
An off-axis extreme ultraviolet (EUV) lithographic objective can achieve a high numerical aperture (NA) beyond 0.33 with only six mirrors due to the efficient separation of the ray path, which greatly improves the resolution and energy utilization. A method is developed to design an off-axis lithographic objective with six mirrors. The method starts with a coaxial system with ray vignetting caused by increase of the NA. To avoid the ray vignetting, a reasonable range of solution for the tilt angle of each mirror is determined by real ray calculation. A set of optimal solutions for tilt angles of mirrors, which corresponds to the minimal composite root-mean-square wavefront error, is found from the reasonable ranges of solutions by a search program. In this way, an initial off-axis configuration without ray vignetting can be directly obtained and it is suitable for further optimization. To demonstrate the practicability of the method, an off-axis design example is given which shows that the presented method provides an efficient process to get to initial configuration for off-axis EUV lithographic objective with six mirrors.
Extreme ultraviolet (EUV) lithography is a promising candidate for next-generation lithography. To achieve an 11-nm node, a six-mirror EUV projection objective with a numerical aperture (NA) of 0.5 is designed with the grouping design method. In this design, pupil obscuration is introduced to decrease the angular spread on the mirrors, which still makes the six-mirror objective with aspheric surfaces sufficient for aberration correction. The grouping design allocates the complexity of designing a whole system to each of the mirror groups and could compatibly apply to designing EUV projection objectives with obscuration. The ×8 reduction design serves as an example for illustrating the grouping design principles for this type of system. In addition, the specific design forms with different reductions are presented and discussed. Design of these six-mirror objective systems provides potential solutions for 11-nm node EUV lithography.
Extreme ultraviolet (EUV) lithography is one of the most promising technologies for 11 nm node. In this paper, a six-mirror objective system with a higher numerical aperture (NA) 0.5 and a central obscuration was designed with grouping design method. Some key issues about grouping design and control of obscuration were discussed in detail. Design result shows that the size of obscuration is smaller than 30% radius of the pupil and the composite Root-Mean-Square (RMS) wavefront error can reach 0.029 λ (λ=13.5 nm) in a 13 mm×1 mm ring field. Design of this six-mirror objective system provides a potential solution for 11 nm node of EUV lithography.
Choosing an adequate initial design for optimization plays an important role in obtaining high-quality extreme ultraviolet (EUV) lithographic objectives. A grouping design method with real ray tracing model is developed to acquire initial configurations of high numerical aperture (NA) objective for EUV lithography. In this method, the objective system is first divided into three mirror groups. The initial parameters of each mirror group are then determined by real ray calculation under design constraints. Finally, the three mirror groups are connected directly into a feasible initial system. Due to real ray calculation, the discrepancy of the ray path induced by paraxial approximation and the exhaustive search of variables is avoided in a high-NA objective design. In addition, the incidence angles on reflective mirrors can be controlled in the design of each group, which makes the initial configuration suited to further optimization and compatible multilayer design. An NA 0.33 six-mirror EUV lithographic objective is designed as an example to implement this method.
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