Mr. Zheng Zhen Profile

Zheng Zhen

at Zhejiang Univ

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Proceedings Article | 4 December 2020 Paper

Back-illuminated modified uni-traveling-carrier photo-diodes (MUTC-PDs) with 3-dB bandwidth over 40 GHz

Zheng Zhen, Ran Hao, Dong Xing, Zhihong Feng, Shangzhong Jin, Erping Li

Proceedings Volume 11617, 1161731 (2020) https://doi.org/10.1117/12.2585422

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InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and highresponsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-μm-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.

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