On-chip focusing of plasmons in graded-index lenses is important for imaging, lithography, signal processing, and optical interconnects at the deep subwavelength nanoscale. However, owing to the inherent strong wavelength dispersion of plasmonic materials, the on-chip focusing of plasmons suffers from severe chromatic aberrations. With the well-established planar dielectric grating, a graded-index waveguide array lens (GIWAL) is proposed to support the excitation and propagation of acoustic graphene plasmon polaritons (AGPPs) and to achieve the achromatic on-chip focusing of the AGPPs with a focus as small as about 2% of the operating wavelength in the frequency band from 10 to 20 THz, benefiting from the wavelength-independent index profile of the GIWAL. An analytical theory is provided to understand the on-chip focusing of the AGPPs and other beam evolution behaviors, such as self-focusing, self-collimation, and pendulum effects of Gaussian beams as well as spatial inversions of digital optical signals. Furthermore, the possibility of the GIWAL to invert spatially broadband digital optical signals is demonstrated, indicating the potential value of the GIWAL in broadband digital communication and signal processing.
Aluminum scandium nitride (Al1-xScxN) optical waveguides with various geometric parameters and scandium (Sc) concentrations (x = 0, 0.09, 0.17, 0.32, 0.41) are investigated by numerical simulation. The waveguides are designed to operate at three near-infrared wavelengths of 940, 1550, and 2000 nm. The effective refractive indices and electric-field intensity of various optical modes for channel and rib waveguides are obtained. In addition, the impact of waveguide width as well as the slab thickness on the single-mode condition of the (Al1-xScxN) waveguides are presented.
A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and
experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light
coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration
processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive
production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature
wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has
been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized
reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic
integration on silicon wafer for optical communication and optical sensing application.
This paper presents results of computer simulation of 1D monolithic high refractive index contrast grating (MHCG) reflector also called surface grating reflector (SGR). We analyzed optical properties of the GaAs reflector designed for 980 nm wavelength with respect to the grating parameters variation. We also determined the electric field patterns after reflection from the structure in several cases of parameters variation. We show that thanks to the scalability and design simplicity, proposed design is a promising candidate for simple, next generation vertical cavity surface emitting lasers emitting from ultra-violet to infrared.
Since Pendry's theoretical proposition of the perfect lens, extensive researches have been carried out in the field by a
number of groups and various lenses and structures have been reported. In this article, we present and discuss light
transmission in a vertical multilayered metal-dielectric structure and a metal chain array consisting of silver spheres with
different diameters. For the incident wavelength of 660 nm, light can transmit a longer distance in the vertical multilayer
structure due to low transmission loss. For the metal nanoparticle chain structure with an incident wavelength of 508 nm,
the output light intensity can be greatly enhanced by adding a small sphere to the input end and output end, respectively
as it is believed to enhance the coupling of the field into the structure and decoupling of the field from the structure,
respectively.
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