Probabilistic Markov Chains modelling to define the relationship between microscopic scattering and macroscopic device level losses of photonic crystal surface emitting lasers (PCSEL) is reported. Here, we assume a priori knowledge of the microscopic scattering via simulation or measurement. The commissioning of the simulator, and convergence criteria are discussed.
We report epitaxially regrown Photonic Crystal Surface-Emitting Lasers (PCSELs) utilizing self-assembled InAs quantum dots (QDs) exhibiting lasing at room temperature. The ability to utilize both the ground-state (GS) and excited-state (ES) of the QDs allows multiple emission wavelengths from one heterostructure. The choice of the grating periods of the photonic crystal allows lasing from neighbouring devices at the GS (~1230 nm) or ES (~1140 nm) of the QDs, 90 nm apart in wavelength. The threshold current densities are 0.69 kA/cm2 and 1.05 kA/cm2 for GS and ES respectively. The effect of PC structures, specifically etch depth of the PC on lasing performance is also discussed.
We outline advances in the design, manufacture, and characterisation of a range of all-semiconductor photonic crystal surface emitting lasers (PCSELs). We initially discuss AlAs/GaAs based PC devices that enjoy improved index contrast compared to our previous GaInP/GaAs devices. We will also discuss all-semiconductor InGaAsP/InP based PC PCSELs operating at 1550 nm.
For these high aspect ratio structures, the infill of the PC is a significant epitaxial challenge, and optimisation of MOVPE growth conditions such as growth temperature, rate of temperature increase, and V:III ratio, is demonstrated through TEM structural analysis. We will also discuss the optoelectronic properties of our devices.
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