Dr. Michael S. Lebby Profile

Dr. Michael S. Lebby

Retired

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 2 April 2020 Open Access

Naturally fast and low power electro-optic polymer optical devices are ideally positioned for the next-generation Internet photonics roadmap (Conference Presentation)

Michael Lebby

Proceedings Volume 11364, 113640F (2020) https://doi.org/10.1117/12.2571129

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Proceedings Article | 2 July 2007 Paper

Fiber optic sensing technology: emerging markets and trends

David Huff, Michael Lebby

Proceedings Volume 6619, 661902 (2007) https://doi.org/10.1117/12.738328

KEYWORDS: Fiber optics sensors, Sensors, Fiber Bragg gratings, Interferometry, Sensor networks, Rayleigh scattering, Surveillance, Raman scattering, Scattering, Environmental sensing

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SPIE Journal Paper | 1 December 1998

Vertical cavity surface emitting laser-based parallel optical data link

Wenbin Jiang, Laura Norton, Philip Kiely, Daniel Schwartz, Ben Gable, Michael Lebby, Glenn Raskin

OE, Vol. 37, Issue 12, (December 1998) https://doi.org/10.1117/12.10.1117/1.601986

KEYWORDS: Vertical cavity surface emitting lasers, Receivers, Waveguides, Lead, Eye, Laser optics, Gallium arsenide, Manufacturing, Switching, Gallium

Proceedings Article | 20 April 1998 Paper

VCSEL devices and packaging

Michael Lebby, Paul Claisse, Wenbin Jiang, Phil Kiley, Mike Roll, Larry Boughter, Pilar Sanchez, Robert Lawrence

Proceedings Volume 3289, (1998) https://doi.org/10.1117/12.305470

KEYWORDS: Vertical cavity surface emitting lasers, Packaging, Waveguides, Photodetectors, Semiconductor lasers, Gallium arsenide, Interfaces, Sensors, Manufacturing, Temperature metrology

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Proceedings Article | 1 May 1997 Paper

Characteristics of VCSELs and VCSEL arrays for optical data links

Craig Gaw, Wenbin Jiang, Michael Lebby, Philip Kiely, Paul Claisse

Proceedings Volume 3004, (1997) https://doi.org/10.1117/12.273825

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Failure analysis, Electroluminescence, Mirrors, Reliability, Optical interconnects, Wafer-level optics, Modulation, Gallium arsenide

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Proceedings Article | 10 April 1997 Paper

Parallel interconnect for a novel system approach to short distance high information transfer data links

Glenn Raskin, Michael Lebby, F. Carney, M. Kazakia, Daniel Schwartz, Craig Gaw

Proceedings Volume 3038, (1997) https://doi.org/10.1117/12.271456

KEYWORDS: Vertical cavity surface emitting lasers, Waveguides, Lead, Interfaces, Receivers, Gallium arsenide, Manufacturing, Semiconducting wafers, Picosecond phenomena, Reliability

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The OPTOBUS^TM family of products provides for high performance parallel interconnection utilizing optical links in a 10-bit wide bi-directional configuration. The link is architected to be 'transparent' in that it is totally asynchronous and dc coupled so that it can be treated as a perfect cable with extremely low skew and no losses. An optical link consists of two identical transceiver modules and a pair of connectorized 62.5 micrometer multi mode fiber ribbon cables. The OPTOBUS^TM I link provides bi- directional functionality at 4 Gbps (400 Mbps per channel), while the OPTOBUS^TM II link will offer the same capability at 8 Gbps (800 Mbps per channel). The transparent structure of the OPTOBUS^TM links allow for an arbitrary data stream regardless of its structure. Both the OPTOBUS^TM I and OPTOBUS^TM II transceiver modules are packaged as partially populated 14 by 14 pin grid arrays (PGA) with optical receptacles on one side of the module. The modules themselves are composed of several elements; including passives, integrated circuits optoelectronic devices and optical interface units (OIUs) (which consist of polymer waveguides and a specially designed lead frame). The initial offering of the modules electrical interface utilizes differential CML. The CML line driver sinks 5 mA of current into one of two pins. When terminated with 50 ohm pull-up resistors tied to a voltage between VCC and VCC-2, the result is a differential swing of plus or minus 250 mV, capable of driving standard PECL I/Os. Future offerings of the OPTOBUS^TM links will incorporate LVDS and PECL interfaces as well as CML. The integrated circuits are silicon based. For OPTOBUS^TM I links, a 1.5 micrometer drawn emitter NPN bipolar process is used for the receiver and an enhanced 0.8 micrometer CMOS process for the laser driver. For OPTOBUS^TM II links, a 0.8 micrometer drawn emitter NPN bipolar process is used for the receiver and the driver IC utilizes 0.8 micrometer BiCMOS technology. The OPTOBUS^TM architecture uses AlGaAs vertical cavity surface emitting lasers (VCSELs) at 850 nm in conjunction with unique opto-electronic packaging concepts. Most laser based transmitter subsystems are incapable of carrying an arbitrary NRZ data stream at high data rates. The receiver subsystem utilizes a conventional GaAs PIN photo-detector. In parallel interconnect systems. The design must take into account the simultaneous switching noise from the neighboring systems. If not well controlled, the high density of the multiple interconnects can limit the sensitivity and therefore the performance of the system. The packaging approach of the VCSEL and PIN arrays allow for high bandwidths and provide the coupling mechanisms necessary to interface to the 62.5 micrometer multi mode fiber. To allow for extremely high electrical signals the OPTOBUS^TM package utilizes a multilayer tape automated bonded (TAB) lead frame. The lead frame contains separate signal and ground layers. The ground layer successfully provides for a pseudo-coaxial environment (low inductance and effective signal coupling to the ground plane).

Proceedings Article | 10 April 1996 Paper

Use of VCSEL arrays for parallel optical interconnects

Michael Lebby, Craig Gaw, Wenbin Jiang, Philip Kiely, Chan Shieh, Paul Claisse, Jamal Ramdani, Davis Hartman, Daniel Schwartz, Jerry Grula

Proceedings Volume 2683, (1996) https://doi.org/10.1117/12.237679

KEYWORDS: Vertical cavity surface emitting lasers, Optics manufacturing, Waveguides, Receivers, Semiconducting wafers, Interfaces, Transmitters, Gallium arsenide, Wafer-level optics, Optoelectronics

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