As a third-generation semiconductor, SiC has the advantages of high band gap, high breakdown field strength, high saturated electron drift speed, and high thermal conductivity. It is used as a substrate material to make power electronic devices. It is widely used in 5G, new energy vehicles, consumer electronics, aerospace and other fields. However, due to the characteristics of hard and brittle and the small thickness of SiC wafer, high-quality cutting is difficult. In this paper, a femtosecond laser with pulse width of 500 fs, center wavelength of 1030 nm, repetition rate of 1 Hz - 40 MHz, and maximum single pulse energy of 200 ΞΌJ was used to cut 4H-SiC wafers with a thickness of 360 ΞΌm. The ablation experiment was carried out under different pulse energy and ablation time, and the ablation threshold of 4H-SiC at a wavelength of 1030 nm was 268.6 mJ/cm2. The single factor control method was used to research the influence of average power, scanning speed, scanning times, defocusing amounts on cutting depth and taper. The elements of cutting section was analyzed with energy dispersive spectrometer.
Carbon fiber reinforced plastic (CFRP) is a key material for lightweighting in aerospace, automotive and other fields. It has the characteristics of anisotropy, high strength, and high hardness. In the processing of CFRP, the use of traditional machining has disadvantages such as severe tool wear, obvious delamination, micro-cracks, and changes in material properties during processing. Laser processing for CFRP provides a non-contact and wear-free processing method. However, it will cause the epoxy resin to generate the heat load, leading to the heat affected zone (HAZ) during the processing. The HAZ is the important indicator of the cutting quality and directly affects the material mechanical properties. Femtosecond pulsed laser with its "cold processing" advantage can greatly reduce the laser's thermal damage to materials and reduce the material's HAZ. In this paper, the cutting process of CFRP by ultraviolet femtosecond pulsed laser is studied. A UV femtosecond laser with a maximum average power of 15W was used to conduct cutting experiments on 2mm thick CFRP. Using the experimental method of single factor analysis, the effect of laser average power, repetition frequency, scanning speed, scanning times, scanning track spacing on cutting quality was studied. The results show that when the average power is 13W, the repetition frequency is 500kHz, the scanning speed is 9m/s and other appropriate process parameters, the width of the HAZ is about 25um.
As the most popular semiconductor material, silicon carbide has received extensive attention from the industry. In this study, a UV laser with a center wavelength of 343ππ, a pulse width of 500ππ , a maximum average power of 12π, and an adjustable repetition rate of 400~500ππ»π§ was used to conduct cutting process experiments on 4H-SiC. A 3D color scanning electron microscope (SEM) and a metallographic microscope are used to observe the cutting section and surface. The effects of laser repetition rate, laser average power, scanning speed and other process parameters on the cutting quality were studied. The ablation threshold of the silicon carbide was obtained to be 44.62ππ½/ππ2. The best cutting result we made is at the condition with the laser average power 2π, the scanning speed 150mm/s, the repetition rate 500kHz, and the scanning number 22 π‘ππππ . Using a metallurgical microscope, it was observed that the cutting surface was neat, without chipping or cracking, and the thermal effect was negligible. The 3D color SEM image are shown that the taper of the slit was 5.75Β° and the roughness of the cut section was less than 2.69μm.
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