Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight; Scott Watson; Shaun Viola; Amit Yadav; Szymon Stanczyk; Szymon Grzanka; Steffan Gwyn; Edik Rafailov; Piotr Perlin; Stephen P. Najda; Mike Leszczyński; Mohsin Haji; Anthony E. Kelly

doi:10.1117/12.2507630

1 March 2019 Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight, Scott Watson, Shaun Viola, Amit Yadav, Szymon Stanczyk, Szymon Grzanka, Steffan Gwyn, Edik Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczyński, Mohsin Haji, Anthony E. Kelly

Author Affiliations +

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109390I (2019) https://doi.org/10.1117/12.2507630
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

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Thomas J. Slight, Scott Watson, Shaun Viola, Amit Yadav, Szymon Stanczyk, Szymon Grzanka, Steffan Gwyn, Edik Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczyński, Mohsin Haji, and Anthony E. Kelly "Recent progress in distributed feedback InGaN/GaN laser diodes", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390I (1 March 2019); https://doi.org/10.1117/12.2507630

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