Thermal And Stress Analysis Of Semiconductor Wafers In A Rapid Thermal Processing Oven

H. A. Lord

doi:10.1117/12.963957

6 April 1990 Thermal And Stress Analysis Of Semiconductor Wafers In A Rapid Thermal Processing Oven

H. A. Lord

Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963957
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

This paper describes studies of heat transfer in a rapid thermal processing-type oven used for several semiconductor wafer processes. These processes include 1) rapid thermal annealing, 2) thermal gradient zone melting, and 3) lateral epitaxial growth over oxide. The heat transfer studies include the measurement of convective heat transfer in a similar apparatus, and the development of a numerical model that incorporates radiative and convective heat transfer. Thermal stresses that are induced in silicon wafers are calculated and compared to the yield stress of silicon at the appropriate temperature and strain rate. Some methods of improving the temperature uniformity and reducing thermal stresses in the wafers are discussed.

Citation Download Citation

H. A. Lord "Thermal And Stress Analysis Of Semiconductor Wafers In A Rapid Thermal Processing Oven", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963957

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