Paper
26 June 1986 Temperature Uniformity Measurement Techniques For Rapid Thermal Processing
Carl Russo
Author Affiliations +
Abstract
Temperature and temperature uniformity measurements in rapid thermal processing (RTP) require accurate, non-contact methods which operate over the temperature range of approximately 300-1400°C with accuracies and reproducibilities of better than 5°C. Non-contact methods for temperature measurements include [optical and infrared pyrometry] comparison measurements made by thermocouples inserted into dummy samples, and methods for temperature uniformity measurement include multiple sensor measurements over the wafer and a variety of process tests which include oxide growth, silicide sintering, polysilicon annealing, partial activation recrystallization and localized melting. Once the temperature measurement has been successfully completed, the results can be used for temperature control. Temperature control techniques include a mixture of optimal nonlinear, PID, and computer control.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl Russo "Temperature Uniformity Measurement Techniques For Rapid Thermal Processing", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961202
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Temperature metrology

Semiconducting wafers

Pyrometry

Calibration

Oxides

Quartz

Silicon

RELATED CONTENT

Multichamber rapid thermal processing
Proceedings of SPIE (April 01 1991)
Improved wafer temperature measurements
Proceedings of SPIE (February 01 1992)
Pyrometer modeling for rapid thermal processing
Proceedings of SPIE (April 01 1991)

Back to Top