Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide

Ekaterina A. Ganykina; Askar A. Rezvanov; Yevgeniy S. Gornev

doi:10.1117/12.2624576

30 January 2022 Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide

Ekaterina A. Ganykina, Askar A. Rezvanov, Yevgeniy S. Gornev

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121570B (2022) https://doi.org/10.1117/12.2624576
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

Neuromorphic computing has been raised as an excellent alternative to conventional digital computing due to scaling limits and heat removal difficulties. At the same time, neuromorphic computing makes special memory requirements, such as high-speed, durability, compatibility with CMOS technology. ReRAM meets these requirements perfectly. Therefore, the goal of this work is to better understand the physics of growth and rupture of metal-like filament in ReRAM.

Citation Download Citation

Ekaterina A. Ganykina, Askar A. Rezvanov, and Yevgeniy S. Gornev "Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121570B (30 January 2022); https://doi.org/10.1117/12.2624576

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available