Progress of an advanced diffusion source plasma reactor

Neil M. P. Benjamin; Brian N. Chapman; Rod W. Boswell

doi:10.1117/12.48906

1 March 1991 Progress of an advanced diffusion source plasma reactor

Neil M. P. Benjamin, Brian N. Chapman, Rod W. Boswell

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48906
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

While the main thrust for downstream reactors has so far focussed on electron cyclotron resonance (ECR) sources operating at 2. 45MHz there are potential price versus performance advantages to be obtained from working in the more conventional 13. 56 MHz frequency regime with novel antenna structures. Desirable features such as high rate uniform etching with low bias capability are retained while others such as reactant use and field efficiency are improved. Progress towards a practical realization of such a reactor will be reported and results obtained in a test stand operation will be presented for a variety of materials and conditions.

Citation Download Citation

Neil M. P. Benjamin, Brian N. Chapman, and Rod W. Boswell "Progress of an advanced diffusion source plasma reactor", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48906

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