Survivability of quantum well optoelectronic devices for space applications

Bruce D. Evans

doi:10.1117/12.177643

8 June 1994 Survivability of quantum well optoelectronic devices for space applications

Bruce D. Evans

Proceedings Volume 2215, Photonics for Space Environments II; (1994) https://doi.org/10.1117/12.177643
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Evaluation of threshold-shift damage factors versus non-ionizing energy deposition for GaAs-based, quantum-well, laser diodes and light-emitting diodes demonstrates that they obey the relation between damage factors and non-ionizing energy loss established for GaAs-based electronic devices.

Citation Download Citation

Bruce D. Evans "Survivability of quantum well optoelectronic devices for space applications", Proc. SPIE 2215, Photonics for Space Environments II, (8 June 1994); https://doi.org/10.1117/12.177643

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