Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

A. A. Al-Jabr; M. A. Majid; C. Shen; T. K. Ng; B. S. Ooi

doi:10.1117/12.2225164

28 April 2016 Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

A. A. Al-Jabr, M. A. Majid, C. Shen, T. K. Ng, B. S. Ooi

Proceedings Volume 9892, Semiconductor Lasers and Laser Dynamics VII; 98921B (2016) https://doi.org/10.1117/12.2225164
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasing threshold current by close to 500 mA in a moderately intermixed laser. Lasing in orange color, as well as spontaneous emission in the yellow and green color regime, were also achieved by extending the annealing conditions. The significance of the current work became apparent when one considers that achieving these tunable wavelengths by increasing the Al content in quantum wells during epitaxy growth leads to severe lattice-mismatch and poor material quality. Hence, our Al "drive-in" intermixing process is a viable approach for forming Al-rich InAlGaP quantum well, which is essential for realizing efficient optoelectronic devices in the "green-yellow-orange gap".

Citation Download Citation

A. A. Al-Jabr, M. A. Majid, C. Shen, T. K. Ng, and B. S. Ooi "Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921B (28 April 2016); https://doi.org/10.1117/12.2225164

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