Paper
7 June 1996 193-nm imaging using a small-field high-resolution imaging resist exposure tool
Author Affiliations +
Abstract
A 193nm excimer laser microstepper has been developed for deep UV photolithography research at this wavelength. The system incorporates a x10, 0.5NA, 4mm field diameter, high-resolution imaging lens of either all-refractive or catadioptric design. An all-fused silica refractive lens has been used in the results reported here to carry out exposures in polymethylmethacrylate and polyvinylphenol photoresists. Well-resolved images of 0.2micrometers dense lines and spaces and 0.35micrometers diameter contact holes have been produced in PMMA and polyvinylphenol resists.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadeem Hasan Rizvi, Malcolm C. Gower, Dominic Ashworth, Neil Sykes, Phil T. Rumsby, Bruce W. Smith, Francis N. Goodall, and Ronald Albert Lawes "193-nm imaging using a small-field high-resolution imaging resist exposure tool", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240981
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Excimer lasers

Imaging systems

Photoresist materials

Polymethylmethacrylate

Laser development

Optical lithography

RELATED CONTENT


Back to Top