High contact resistance heavily doped silicided p+ junctions

Michael S. Twiford; F. A. Stevie; E. B. Prather; Morgan J. Thoma; William T. Cochran

doi:10.1117/12.250851

12 September 1996 High contact resistance heavily doped silicided p+ junctions

Michael S. Twiford, F. A. Stevie, E. B. Prather, Morgan J. Thoma, William T. Cochran

Proceedings Volume 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II; (1996) https://doi.org/10.1117/12.250851
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Submicron CMOS VLSI wafer product yield problems were correlated with a high p⁺ contact resistance in an Al/TiN/Ti/TiSi₂/Si structure. Electrical measurements of contact resistance kelvin (non-interface) versus (interface) contact test structures were used to isolate the high resistance path. Secondary ion mass spectrometry (SIMS) analysis showed good correlation between the Ti to TiSi₂ formation and different anneal conditions. The analysis also showed a strong relationship between TiSi₂ formation and p⁺ surface concentration and junction depth. Deeper boron penetration into the silicon will occur with incomplete silicide penetration. The analytical data showed the changes in processing necessary to eliminate the resistance problem and achieve high dopant surface concentration and the desired junction depth.

Citation Download Citation

Michael S. Twiford, F. A. Stevie, E. B. Prather, Morgan J. Thoma, and William T. Cochran "High contact resistance heavily doped silicided p+ junctions", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); https://doi.org/10.1117/12.250851

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