Paper
3 June 1998 X-ray measurement of tungsten films grown in a nonflowing laser-induced CVD process
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Abstract
A lab scale nonflowing reactor was built to study chemical vapor deposition reactions and for the purpose of minimizing the waste of expensive high purity and toxic gases. The reactor operates as a batch process resulting in a time varying gas composition during the course of deposition. Samples were heated either resistively (thermal CVD) or with focused laser light (laser CVD). X-ray measurements were made on the deposited tungsten samples. Obtained results (tungsten structural parameters) were compared with the same parameters obtained for the tungsten films deposited in a commercial, flowing CVD process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elzbieta B. Jankowska-Kuchta, Carol McConica, Devin Moss, and Janusz Kozlowski "X-ray measurement of tungsten films grown in a nonflowing laser-induced CVD process", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); https://doi.org/10.1117/12.309525
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KEYWORDS
Tungsten

Chemical vapor deposition

Silicon

Crystals

X-rays

Hydrogen

Diffraction

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