High-temperature single-hole silicon transistors

Nikolai T. Bagraev; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Alexander Naeser; Vladimir V. Romanov

doi:10.1117/12.299589

1 January 1998 High-temperature single-hole silicon transistors

Nikolai T. Bagraev, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, Vladimir V. Romanov

Proceedings Volume 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering; (1998) https://doi.org/10.1117/12.299589
Event: International Workshop on New Approaches to High Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, 1997, St. Petersburg, Russian Federation

Abstract

We present the first findings of the quantized conductance, EPR-EDEPR and NMR techniques which reveal the spin-dependent confinement and quantization phenomena in the silicon quantum wires created by the electrostatic ordering of the self-assembly dipole boron (B⁺-B^-) centers. These C_3v symmetry dipole impurity centers are regularly arranged along the edges of self-assembly longitudinal and lateral quantum wells (LQW and LaQW) which are naturally formed in the p⁺-diffusion profile inside ultra-shallow silicon n⁺-p⁺-p and n⁺-p⁺-n structures. A negative magnetoresistance that is evidence of the spin-dependent weak localization in self- assembly quantum wells at low electric fields is studied. The presence of natural quantum-size contacts inside self-assembly quantum wells is exhibited using the quantized conductance technique in weak magnetic fields.

Citation Download Citation

Nikolai T. Bagraev, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, and Vladimir V. Romanov "High-temperature single-hole silicon transistors", Proc. SPIE 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, (1 January 1998); https://doi.org/10.1117/12.299589

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