Paper
19 July 2000 Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-μm reticle fabrication
Tadashi Arai, Toshio Sakamizu, Kei Kasuya, Kohji Katoh, Takashi Soga, Hidetaka Saitoh, Hiroshi Shiraishi, Morihisa Hoga
Author Affiliations +
Abstract
We have developed a novolak-based chemical-amplification resist for 0.13-micrometers or later reticle fabrication. For the 0.13-micrometers or later design-rule reticle-fabrication with OPC patterns, the resist resolution is required under 0.2-micrometers on the mask substrate. To improve the chemical-amplification resist resolution, it is necessary to control the acid- diffusion in the resist film. We have developed the technique of the acid-diffusion control with neutral-salt additives. By use of the resist with this technique, we could fabricate 0.14-micrometers 1/s patterns on a CrOx substrate at a dose of 9.3-(mu) C/cm2. The resist has a good margin of doses.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Arai, Toshio Sakamizu, Kei Kasuya, Kohji Katoh, Takashi Soga, Hidetaka Saitoh, Hiroshi Shiraishi, and Morihisa Hoga "Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-μm reticle fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392065
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KEYWORDS
Reticles

Additive manufacturing

Laser sintering

Control systems

Photomasks

Diffusion

Optical proximity correction

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