Temperature dependence of quantum dot lasers

Dennis G. Deppe; Gyoungwon Park; Oleg B. Shchekin

doi:10.1117/12.392129

11 July 2000 Temperature dependence of quantum dot lasers

Dennis G. Deppe, Gyoungwon Park, Oleg B. Shchekin

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392129
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

Carrier dynamics in self-assembled quantum dots, grown by molecular beam epitaxy, have been studied. The temperature dependence of the relaxation times, measured by room temperature high frequency impedance response of quantum dot lasers and by low temperature (T=4K) differential transmission spectroscopy, strongly suggests that electron- hole scattering is the dominant scattering mechanism in quantum dots. The favorable relaxation times can be exploited to realize far infrared emission and detection based on intersubband transitions in the dots.

Citation Download Citation

Dennis G. Deppe, Gyoungwon Park, and Oleg B. Shchekin "Temperature dependence of quantum dot lasers", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392129

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