Paper
6 June 2001 High-brightness laser diodes using angular filtering by total reflection
Joseph Rogg, Konstantin Boucke, Marc T. Kelemen, Franz Rinner, Wilfried Pletschen, Rudolf Kiefer, Martin Walther, Michael Mikulla, Reinhart Poprawe, Guenter Weimann
Author Affiliations +
Abstract
A high power semiconductor laser with a novel lateral design using angular filtering by total reflection for increased brightness is demonstrated. In this so called `Z-Laser' two inner surfaces guide the laser beam by total reflection in a Z-shaped path through the laser. Higher order laser modes with larger divergence angles are suppressed because of a smaller reflectivity. This results in a reduced far-field angle. Simulations based on a 2D steady state wave equation solved by using the Pade approximation, an 1D carrier diffusion equation and a logarithmic gain model have been performed to design the device.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph Rogg, Konstantin Boucke, Marc T. Kelemen, Franz Rinner, Wilfried Pletschen, Rudolf Kiefer, Martin Walther, Michael Mikulla, Reinhart Poprawe, and Guenter Weimann "High-brightness laser diodes using angular filtering by total reflection", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429801
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Mirrors

Optical filters

Near field

Diffusion

High power lasers

Reflection

Back to Top