Ar ion implantation into resist for etching resistance improvement

Atsumi Yamaguchi; Akihiro Nakae; Kouichirou Tsujita

doi:10.1117/12.436899

24 August 2001 Ar ion implantation into resist for etching resistance improvement

Atsumi Yamaguchi, Akihiro Nakae, Kouichirou Tsujita

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436899
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Argon (Ar) ion implantation into resist pattern was investigated and the remarkable improvement of the etching resistance was confirmed on various films such as tungsten, aluminum copper, silicon oxide and silicon nitride. The possibility to make resist thickness thinner was proven. Ion dose more than 1E15/cm² was necessary to obtain a sufficient effect, so that shrinking of resist thickness and pattern width occurred simultaneously. The dependence of pattern shrinking on the line width was observed. Line width uniformity within a wafer was improved because of high etching resistance by ion implantation process. Line edge roughest (LER) or resist pattern was also reduced by ion implantation and smooth etched pattern could be formed. Although same effects were obtained for ArF resist, the shrinkage of ArF resist after ion implantation was more than that of KrF resists. The improvements in etching resistance and critical dimension (CD) control will be discussed in this article.

Citation Download Citation

Atsumi Yamaguchi, Akihiro Nakae, and Kouichirou Tsujita "Ar ion implantation into resist for etching resistance improvement", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436899

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