Boron Diffusion In Silicon From Ultrafine Boron-Silicon Powder

Arunava Gupta; Gary A. West; Jeffrey P. Donlan

doi:10.1117/12.939442

14 June 1984 Boron Diffusion In Silicon From Ultrafine Boron-Silicon Powder

Arunava Gupta, Gary A. West, Jeffrey P. Donlan

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939442
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

A CO₂ laser pyrolysis technique has been used to prepare ultrafine (< 0.1p diameter) boron-silicon powders with different boron concentrations. These powders have been used as a spin-on boron diffusion source for silicon wafers. The spin-on colloidal suspension is prepared by mixing the powder with a thermally degradable polymer binder, polymethyl-methacrylate (PMMA), and an organic vehicle, cyclohexanone. Thin, uniform films are spun-on using a standard photoresist spinner. Two different procedures are followed in diffusing the boron from the boron-silicon powder. In the first process, the boron is diffused by heating the wafer in an argon ambient (1000-1260°C). The excess dopant layer is removed by oxidation (0₂) and subsequent etching (HF). In the second process, the powder is first converted to a borosilicate glass layer by oxidation, followed by diffusion in an argon ambient. Some experiments using commercially available boron nitride powder as a diffusion source are also discussed.

Citation Download Citation

Arunava Gupta, Gary A. West, and Jeffrey P. Donlan "Boron Diffusion In Silicon From Ultrafine Boron-Silicon Powder", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939442

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