Smart masks for next-generation lithography

Dryver R. Huston; Wolfgang Sautera

doi:10.1117/12.508736

13 March 2003 Smart masks for next-generation lithography

Dryver R. Huston, Wolfgang Sautera

Proceedings Volume 4763, European Workshop on Smart Structures in Engineering and Technology; (2003) https://doi.org/10.1117/12.508736
Event: European Workshop on Smart Structures in Engineering and Technology, 2002, Giens, France

Abstract

Next generation lithograph tools, such as x-ray, ion or electron beam use thin film membrane windows for the exposure masks. Systematic aberrations due to heat distortions during exposure and other influences are inevitable. The possibility of integrating an active correction system by mechanical stretching with precision actuators is investigated. The basic idea is to measure the placement error of the mask at a finite number of precision points and use these errors measurements to stretch the membrane with in-plane actuators back to their proper locations. The actuation could be implemented by micro-actuators that are monolithically attached directly to the mask membrane. In order to implement such a system, the following are required: 1) A metrology system that precisly measures the displacement of a set of precision points; 2) Micro-actuators that can be directly attached to the mask and offer sufficient force and displacement to strain the mask; and 3) A control algorithm and system that correlates 1 with 2.

Citation Download Citation

Dryver R. Huston and Wolfgang Sautera "Smart masks for next-generation lithography", Proc. SPIE 4763, European Workshop on Smart Structures in Engineering and Technology, (13 March 2003); https://doi.org/10.1117/12.508736

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KEYWORDS

Photomasks

Actuators

Lithography

Condition numbers

Control systems

X-rays

Metrology

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