Characterization of QWIP (10- to 16-um) broadband FPA

S. B. Rafol; Sarath D. Gunapala; Sumith V. Bandara; John K. Liu; David Z.-Y. Ting; Jason M. Mumolo; Francis M. Reininger

doi:10.1117/12.450911

23 January 2003 Characterization of QWIP (10-16 μm) broadband FPA

S. B. Rafol, Sarath D. Gunapala, Sumith V. Bandara, John K. Liu, David Z.-Y. Ting, Jason M. Mumolo, Francis M. Reininger

Author Affiliations +

Proceedings Volume 4820, Infrared Technology and Applications XXVIII; (2003) https://doi.org/10.1117/12.450911
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

An optimally designed GaAs/AlGaAs broadband Quantum Well IR Photodetector QWIP Focal Plane Array FPA is fabricated and hybridized to a 640 × 512 Read Out Integrated Circuit with 25μm pixel pitch. The substrate-thinned and LCC mounted FPA was loaded into a dewar and cooled to liquid Neon temperature for characterization. The temperature of the FPA was stabilized at 35K several minutes after power was applied. We will report on the NEΔT, QE, uniformity, and D* result.

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S. B. Rafol, Sarath D. Gunapala, Sumith V. Bandara, John K. Liu, David Z.-Y. Ting, Jason M. Mumolo, and Francis M. Reininger "Characterization of QWIP (10-16 μm) broadband FPA", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); https://doi.org/10.1117/12.450911

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