Tunnel barrier formation in carbon nanotubes for quantum dot devices

Koji Ishibashi; Masaki Suzuki; Daiju Tsuya; Yoshinobu Aoyagi

doi:10.1117/12.479603

1 July 2003 Tunnel barrier formation in carbon nanotubes for quantum dot devices

Koji Ishibashi, Masaki Suzuki, Daiju Tsuya, Yoshinobu Aoyagi

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479603
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Our effort to form reliable tunnel barriers in single and multi-wall carbon nanotubes is presented. As well as the standard method which uses a simple deposition of contact metal on nanotubes, we use a narrow SiO₂ deposition and Ar ion beam irradiation to form the tunnel barrier in nanotubes. Such devices as a single electron transistor, double coupled quantum dots and a single electron inverter have been fabricated. Their performance has been measured from 20 mK up to liquid helium temperature. The unique microwave response of coupled quantum dots is also presented. We show that the carbon nanotubes are attractive material for the building block of quantum-dot based nanodevices with extremely small dimensions, and our method may be useful to realize the devices and cirucits.

Citation Download Citation

Koji Ishibashi, Masaki Suzuki, Daiju Tsuya, and Yoshinobu Aoyagi "Tunnel barrier formation in carbon nanotubes for quantum dot devices", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.479603

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