MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Nikolay A. Maleev; Alexey R. Kovsh; Alexey E. Zhukov; Sergei S. Mikhrin; A. V. Vasil'ev; E. S. Semenova; Yuri M. Shernyakov; E. V. Nikitina; N. V. Kryjanovskaya; D. S. Sizov; Ilja P. Soshnikov; Mikhail V. Maximov; N. N. Ledentsov; Victor M. Ustinov; Dieter Bimberg; Zhores I. Alferov

doi:10.1117/12.514327

11 June 2003 MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Nikolay A. Maleev, Alexey R. Kovsh, Alexey E. Zhukov, Sergei S. Mikhrin, A. V. Vasil'ev, E. S. Semenova, Yuri M. Shernyakov, E. V. Nikitina, N. V. Kryjanovskaya, D. S. Sizov, Ilja P. Soshnikov, Mikhail V. Maximov, N. N. Ledentsov, Victor M. Ustinov, Dieter Bimberg, Zhores I. Alferov

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514327
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Recent results on molecular-beam epitaxy growth of the quantum dot InGaAs/GaAs heterostructures for long-wavelength lasers on GaAs substrates are presented. As a result of optimization of the growth procedure for active region and emitter layers low-threshold current density (45 - 80 A/cm²) long-wavelength (1.27 - 1.3 μm) laser diodes may be fabricated with high reproducibility.

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Nikolay A. Maleev, Alexey R. Kovsh, Alexey E. Zhukov, Sergei S. Mikhrin, A. V. Vasil'ev, E. S. Semenova, Yuri M. Shernyakov, E. V. Nikitina, N. V. Kryjanovskaya, D. S. Sizov, Ilja P. Soshnikov, Mikhail V. Maximov, N. N. Ledentsov, Victor M. Ustinov, Dieter Bimberg, and Zhores I. Alferov "MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514327

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