QD lasers: physics and applications

Nikolai N. Ledentsov; Alexey R. Kovsh; Vitaly A. Shchukin; Sergey S. Mikhrin; Igor L. Krestnikov; A. V. Kozhukhov; Leonid Ya. Karachinsky; Mikhail V. Maximov; Innokenty I. Novikov; Yuri M. Shernyakov; Ilja P. Soshnikov; Alexey E. Zhukov; Efim L. Portnoi; Victor M. Ustinov; D. Gerthsen; Pallab K. Bhattacharya; N. F. Zakharov; P. Werner; Friedhelm Hopfer; Matthias Kuntz; Dieter Bimberg

doi:10.1117/12.570284

31 January 2005 QD lasers: physics and applications

Nikolai N. Ledentsov, Alexey R. Kovsh, Vitaly A. Shchukin, Sergey S. Mikhrin, Igor L. Krestnikov, A. V. Kozhukhov, Leonid Ya. Karachinsky, Mikhail V. Maximov, Innokenty I. Novikov, Yuri M. Shernyakov, Ilja P. Soshnikov, Alexey E. Zhukov, Efim L. Portnoi, Victor M. Ustinov, D. Gerthsen, Pallab K. Bhattacharya, N. F. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, Dieter Bimberg

Author Affiliations +

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.570284
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

Quantum dot (QDs) heterostructures structurally represent tiny 3D insertions of a narrow bandgap material, coherently embedded in a wide-bandgap single-crystalline matrix. The QDs are produced by conventional epitaxial techniques applying self-organized growth and behave electronically as artificial atoms. Strain-induced attraction of QDs in different rows enables vertically-coupled structures for polarization, lifetime and wavelength control. Overgrowth with ternary or quaternary alloy materials allows controllable increase in the QD volume via the island-activated alloy phase separation. Repulsive forces during overgrowth of QDs by a matrix material enable selective capping of coherent QDs, keeping the defect regions uncapped for their subsequent selective evaporation. Low-threshold injection lasing is achieved up to 1350 nm wavelength at 300K using InAs-GaAs QDs. 8 mW VCSELs at 1.3 μm with doped DBRs are realized. Edge-emitters demonstrate 10 GHz bandwidth up to 70°C without current adjustment. VCSELs show ~4 GHz relaxation oscillation frequency. QD lasers demonstrate above 3000 h of CW operation at 1.5 W at 45°C heat sink temperature without degradation. The defect reduction technique (DRT) applied to thick layers enables realization of defect-free structures on top of dislocated templates. Using of DRT metamorphic buffer layers allowed 7W GaAs-based QD lasers at 1500 nm.

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Nikolai N. Ledentsov, Alexey R. Kovsh, Vitaly A. Shchukin, Sergey S. Mikhrin, Igor L. Krestnikov, A. V. Kozhukhov, Leonid Ya. Karachinsky, Mikhail V. Maximov, Innokenty I. Novikov, Yuri M. Shernyakov, Ilja P. Soshnikov, Alexey E. Zhukov, Efim L. Portnoi, Victor M. Ustinov, D. Gerthsen, Pallab K. Bhattacharya, N. F. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, and Dieter Bimberg "QD lasers: physics and applications", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.570284

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