Paper
24 April 2003 Characterization of front- to backwafer alignment and bulk micromachining using electrical overlay test structures
Henk W. van Zeijl, John Slabbekoorn
Author Affiliations +
Proceedings Volume 5116, Smart Sensors, Actuators, and MEMS; (2003) https://doi.org/10.1117/12.499104
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain
Abstract
MEMS device fabrication can benefit from accurate front- to backwafer alignment (FTBA) using Wafersteppers. To characterize FTBA an electrical overlay test structure is designed and fabricated to measure front- to backwafer overlay in a bulk micromachining process. Only two lithographic steps are required to fabricate these devices. The conductive film on the frontwafer, TiN, is virtually insensitive for mechanical damage during backwafer processing, and features a low etch rate in anisotropic KOH etching (2.4 nm/hr). Both FTBA overlay and FTBA CD variations are measured. The measurements shows that the front to backwafer overlay accuracy in bulk micro machining are limited by non-lithographic process errors.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henk W. van Zeijl and John Slabbekoorn "Characterization of front- to backwafer alignment and bulk micromachining using electrical overlay test structures", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); https://doi.org/10.1117/12.499104
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Optical alignment

Resistors

Overlay metrology

Semiconducting wafers

Etching

Tin

Bulk micromachining

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