Photodetector with giant internal current amplification: experiment and numerical calculated model

Aleksandr Malik; Volodymyr Grimalsky; Alfonso Jacome Torres; Carlos Zuniga; D. Durini

doi:10.1117/12.512861

19 February 2004 Photodetector with giant internal current amplification: experiment and numerically calculated model

Aleksandr Malik, Volodymyr Grimalsky, Alfonso Jacome Torres, Carlos Zuniga, D. Durini

Proceedings Volume 5251, Detectors and Associated Signal Processing; (2004) https://doi.org/10.1117/12.512861
Event: Optical Systems Design, 2003, St. Etienne, France

Abstract

New silicon based optical sensors with a metal - insulator - semiconductor structure (MIS) are developed and investigated both theoretically and experimentally. The physical properties of these sensors are described with a model of MIS capacitor where a presence of depletion layer of electrons and an inversion layer of holes of a finite depth is taken into account. Two-level voltage bias provides a transient between two quasi-equilibrium inversion modes. This transient is applied both for storage and for readout of the input optical signal for quantitative measurements of a weak infra red radiation. Proposed simple readout procedure provides reading the integrated information with a significant amplification. The amplification (or the current transformation coefficient) is determined by the ratio of integration and readout times and it may exceed 10⁴. A theoretical model is given to explain a behavior of the sensor under storage by thermo generated carries and by photo generated ones jointly. Numerical simulations are of an agreement with experimental investigations of proposed sensors.

Citation Download Citation

Aleksandr Malik, Volodymyr Grimalsky, Alfonso Jacome Torres, Carlos Zuniga, and D. Durini "Photodetector with giant internal current amplification: experiment and numerically calculated model", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); https://doi.org/10.1117/12.512861

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