Improvement of ohmic contact to P-type GaN using two-step activation processing

Zhi-Nong Yu; Wei Xue; Jong-Wook Seo; Soon-Jae Yu

doi:10.1117/12.572520

31 January 2005 Improvement of ohmic contact to P-type GaN using two-step activation processing

Zhi-Nong Yu, Wei Xue, Jong-Wook Seo, Soon-Jae Yu

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.572520
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×10¹⁸cm^-3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10^-4Ω.cm², These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

Citation Download Citation

Zhi-Nong Yu, Wei Xue, Jong-Wook Seo, and Soon-Jae Yu "Improvement of ohmic contact to P-type GaN using two-step activation processing", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.572520

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