Self-assembling formation of Si-based quantum dots and control of their electric charged states for multi-valued memories

Seiichi Miyazaki

doi:10.1117/12.632483

22 November 2005 Self-assembling formation of Si-based quantum dots and control of their electric charged states for multi-valued memories

Seiichi Miyazaki

Author Affiliations +

Proceedings Volume 6002, Nanofabrication: Technologies, Devices, and Applications II; 60020K (2005) https://doi.org/10.1117/12.632483
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

We have prepared hemispherical Si nanocrystals as quantum dots (QDs) on thermally-grown SiO₂ layers in a self-assembled manner by controlling the early stages of LPCVD using SiH₄, and also formed Si-QDs with a Ge core by controlling the selective growth conditions in SiH₄- and GeH₄-LPCVD. From the change in the surface potential at each of QDs caused by electron injection or emission through ultrathin SiO₂ as measured with an AMF/Kelvin probe technique, we have quantified how many electrons or holes can be retained stably in the single dot covered with ultrathin SiO₂ at room temperature without any external biases. We have found that, for Si-QDs with a Ge core, electrons are retained stably in Si clad while holes in Ge core. MOS capacitors and FETs with the Si dots as a floating gate have also been designed and fabricated. Multiple-step electron charging (or discharging) characteristics of the Si-dot floating gate are observable presumably because columbic force arising from charged dots efficiently suppresses the electron charging of neighboring neutral dots. From the temperature dependence of temporal change in the drain current at a fixed positive gate bias after complete discharging of the Si-QDs floating gate, we were found that the multiple step charging proceeds with an thermal activation energy being almost equal to the energy separation in the sum of quantized and charging energies between the charged states.

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Seiichi Miyazaki "Self-assembling formation of Si-based quantum dots and control of their electric charged states for multi-valued memories", Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020K (22 November 2005); https://doi.org/10.1117/12.632483

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KEYWORDS

Quantum dot light emitting diodes

Silicon

Capacitors

Germanium

Molybdenum

Low pressure chemical vapor deposition

Oxides

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