A novel free-space optical interconnect employing vertical-cavity surface emitting laser diodes and InGaAs metal-semiconductor-metal photodetectors for Gbit/s RF/microwave systems

Gregory R. Savich; Rainee N. Simons

doi:10.1117/12.641734

28 February 2006 A novel free-space optical interconnect employing vertical-cavity surface emitting laser diodes and InGaAs metal-semiconductor-metal photodetectors for Gbit/s RF/microwave systems

Gregory R. Savich, Rainee N. Simons

Author Affiliations +

Proceedings Volume 6126, Photonics Packaging and Integration VI; 61260B (2006) https://doi.org/10.1117/12.641734
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Emerging technologies and continuing progress in research are making way for novel, high speed forms of optical data transfer. Vertical-cavity surface emitting laser (VCSEL) diodes operating at 1550nm have only recently become commercially available, while metal-semiconductor-metal (MSM) photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating up to 1Gbit/s utilizing commercially available 1550nm VCSEL diodes and newly fabricated InGaAs MSM photodetectors with functionality for both chip level and board level applications. We report on development, progress, and current work. Analyses of the divergent behavior and of the normalized frequency response of VERTILAS GmbH 1550nm VCSEL diodes for coupling to MSM photodetectors with a 50μm by 50μm active area are presented. The MSM photodetectors are fabricated on a pseudomorphic In_0.9Ga_0.1P-InP-InGaAs heterostructure and have gold interdigitated Shottky contacts with varying electrode width and spacing on the order of 1 to 3 microns. We discuss the calculated response of these MSM photodetectors as well as the fabrication and characterization of the devices. A report on bit error rate (BER) characteristics of the VCSEL diodes coupled to commercially available high-speed photodetectors and successively coupled to the novel MSM photodetectors integrated with commercially available transimpedance amplifiers (TIA) follows. The work accounted here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect applying VCSEL diodes and MSM photodetectors operating at 1550nm for RF/microwave digital systems.

Citation Download Citation

Gregory R. Savich and Rainee N. Simons "A novel free-space optical interconnect employing vertical-cavity surface emitting laser diodes and InGaAs metal-semiconductor-metal photodetectors for Gbit/s RF/microwave systems", Proc. SPIE 6126, Photonics Packaging and Integration VI, 61260B (28 February 2006); https://doi.org/10.1117/12.641734

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KEYWORDS

Photodetectors

Diodes

Vertical cavity surface emitting lasers

Sensors

Optical interconnects

Semiconducting wafers

Gold

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