Paper
12 December 2007 On-line measurement system of GaAs photocathodes and its applications
Jijun Zou, Lin Feng, Gangyong Lin, Yuntao Rao, Zhi Yang, Yunsheng Qian, Benkang Chang
Author Affiliations +
Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67823D (2007) https://doi.org/10.1117/12.745945
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
The preparation process of GaAs photocathodes is very complicated, in order to prepare the high performance cathodes, it is crucial to obtain information enough to evaluate the preparation process in real time. Based on a particular transfer light setup and a flexible communication network, we develop an on-line measurement system for GaAs cathode preparation, which is used to measure the pressure of activation chamber, sample temperature, photocurrent, spectral response curves, and currents heating Cs and oxygen dispensers during the heat-cleaning or activation processes of cathodes. According to these signals, we present some simple and real-time evaluation techniques for cathode preparation. Several peaks of pressure are observed in the pressure variations measured during heat cleaning. These peaks corresponding to the desorption of AsO, As2O3, Ga2O and Ga2O3 from the sample surface at different temperatures, respectively, are used to evaluate the effect of heat cleaning very well, while the signals measured during activation can be used to analyze and optimize the activation technique. Based on a revised quantum efficiency equation, many performance parameters of cathodes are obtained from the fitting of spectral response curves. According to these parameters, the performance of cathode material and the effect of activation can be evaluated.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jijun Zou, Lin Feng, Gangyong Lin, Yuntao Rao, Zhi Yang, Yunsheng Qian, and Benkang Chang "On-line measurement system of GaAs photocathodes and its applications", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67823D (12 December 2007); https://doi.org/10.1117/12.745945
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Cited by 11 scholarly publications.
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KEYWORDS
Gallium arsenide

Cesium

Gallium

Oxygen

Quantum efficiency

Temperature metrology

Oxides

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