Paper
19 October 2001 Spectral response and surface layer thickness of GaAs:Cs-O negative electron affinity photocathode
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444934
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
On-line spectral response curves of GaAs:Cs-O NEA photo- cathode of reflection model is first presented and the relation between spectral response curves and the thickness of Cs-O layer is discussed. When Cs and O is deposited on the surface of cleaning GaAs wafer, photo-cathode's spectral response rises sharply and long-wavelength threshold tends to a fixed value at the beginning of the activation. But, as Cs and O are deposited continually, spectral response rises slowly and the long-wavelength threshold tends to be shortened. When a fine thickness of Cs-O layer is reached, the optimum spectral response is obtained. As a quantity Cs-O is further increased, both the spectral response and the long-wavelength threshold decrease. The thickness of GaAs photo-cathode surface layer that consists of Cs-O layer and GaAs-O layer is researched by take-off angle XPS technology. Thickness of Cs-O layer is approximately equal to 0.7 nm, and the GaAs-O layer is approximately 0.2nm. Our experiments show when the thickness of Cs-O layer is approximately equal to 0.7nm, and the GaAs-O layer is approximately 0.2mm. Our experiments show when the thickness of Cs-O layer is 0.7nm or so and the GaAs-O layer tend to be disappeared, NEA photo-cathode with the optimum spectral response is achieved which can be used widely in low-light level imaging detectors.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benkang Chang, Wenli Liu, Rongguo Fu, Yunsheng Qian, Zhiyuan Zong, and Guihua Wang "Spectral response and surface layer thickness of GaAs:Cs-O negative electron affinity photocathode", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444934
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KEYWORDS
Cesium

Gallium arsenide

Oxygen

Reflection

Image sensors

Sensors

Oxides

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