Paper
4 August 2009 Optimization of (100)-Si TMAH etching for uncooled infrared detector
Y. Shuai, C. G. Wu, W. L. Zhang, Y. R. Li, X. Z. Liu, J. Zhu
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Abstract
The influences of concentration of the Tetra-methyl ammonium hydroxide (TMAH) solution together with oxidizer additions were studied in order to optimize the anisotropic silicon etching in the development of a fabrication process for Ba0.65Sr0.35TiO3 (BST) pyroelectric thin film infrared detectors. The detector active element was consisted of capacitance NiCr/BST/Pt and the thin silicon suspending membrane. The later one was formed by bulk anisotropically etching of the (100)-Si wafer. Both solution concentration and oxidizing agent were tuned in order to obtain an optimum etching process. Some improvements such as higher etch rate and lower surface roughness have been obtained by the addition of ammonium peroxide sulfate ((NH4)S2O8) as oxidizing agent under different conditions. The examination of etching speed and surface topography were performed by step surface profiler and scanned electronic microscopy. Furthermore, a simple approach was developed to fabric BST pyroelectric thin film detector based on the optimized TMAH etching parameters. A BST thin film capacitance was formed on a thin silicon membrane, where high sensitivity D* of 9.4×107cm•Hz1/2/W was measured.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Shuai, C. G. Wu, W. L. Zhang, Y. R. Li, X. Z. Liu, and J. Zhu "Optimization of (100)-Si TMAH etching for uncooled infrared detector", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73830H (4 August 2009); https://doi.org/10.1117/12.834985
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KEYWORDS
Etching

Silicon

Infrared detectors

Silicon films

Thin films

Anisotropic etching

Sensors

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