A new x-ray metrology for profiling nanostructures of patterned media

Kazuhiko Omote; Yoshiyasu Ito; Yuko Okazaki; Yuichi Kokaku

doi:10.1117/12.833504

23 September 2009 A new x-ray metrology for profiling nanostructures of patterned media

Kazuhiko Omote, Yoshiyasu Ito, Yuko Okazaki, Yuichi Kokaku

Proceedings Volume 7488, Photomask Technology 2009; 74881T (2009) https://doi.org/10.1117/12.833504
Event: SPIE Photomask Technology, 2009, Monterey, California, United States

Abstract

We have developed a new x-ay metrology for profiling surface periodic structure of discrete track patterned media. X-rays irradiate surface of the discrete track media with a shallow glancing angle, which is close to the critical angle of total external reflection of the surface material. The measured x-ray scattering pattern is reflected to the average cross-sectional profile of the grating. Resist pattern of circular discrete track with120 nm-pitch on 65 mmφ magnetic disc is analyzed by the present x-ray metrology. The obtained profile, for example, line width, height of the track and so on are well agreed with that observed by cross-sectional scanning electron microscopy. The wavelength of x-ray that we use is 0.154093 nm and it is enough shorter than the critical length of the grating structure, even when the track width becomes 10 nm or less. Therefore, the resolution of the x-ray metrology will be maintained well that of required in future. In addition, x-ray metrology is able to profiling the cross-sectional structure with nondestructively due to hightransmissivity of x-rays for the materials. Furthermore, the optical parameter of the materials is well established in x-ray region, therefore, it is applicable not only resist patterns, but also real device patterns only with certain physical/optical parameters.

Citation Download Citation

Kazuhiko Omote, Yoshiyasu Ito, Yuko Okazaki, and Yuichi Kokaku "A new x-ray metrology for profiling nanostructures of patterned media", Proc. SPIE 7488, Photomask Technology 2009, 74881T (23 September 2009); https://doi.org/10.1117/12.833504

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