Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor

Sazia A. Eliza; Achyut K. Dutta

doi:10.1117/12.851536

23 April 2010 Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor

Sazia A. Eliza, Achyut K. Dutta

Proceedings Volume 7673, Advanced Environmental, Chemical, and Biological Sensing Technologies VII; 76730A (2010) https://doi.org/10.1117/12.851536
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

This paper presents the analytical performances of an AlGaN/GaN High Electron Mobility Transistor (HEMT) based sensor for the detection of H2 gas. The model calculates the changes in drain-to-source current and sensitivity of the device due to adsorbed atomic density of gas at the gate terminal. Simulated results indicate that AlGaN/GaN HEMT based floating gate sensors are highly suitable for the extreme environment detection of various gases with concentration as low as ~ ppb level.

Citation Download Citation

Sazia A. Eliza and Achyut K. Dutta "Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor", Proc. SPIE 7673, Advanced Environmental, Chemical, and Biological Sensing Technologies VII, 76730A (23 April 2010); https://doi.org/10.1117/12.851536

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