Considerations for high-numerical aperture EUV lithography

Harry J. Levinson; Pawitter Mangat; Thomas Wallow; Lei Sun; Paul Ackmann; Sheldon Meyers

doi:10.1117/12.2015829

1 April 2013 Considerations for high-numerical aperture EUV lithography

Harry J. Levinson, Pawitter Mangat, Thomas Wallow, Lei Sun, Paul Ackmann, Sheldon Meyers

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 867916 (2013) https://doi.org/10.1117/12.2015829
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

With numerical apertures > 0.4 there will be broad ranges of angles of incidence of light on masks for EUV systems with 4× lens reduction, leading to several undesirable consequences with current MoSi multilayers and tantalum-based absorbers. An option for reducing the range of incident angles is to increase the lens reduction, but this entails small field sizes with standard 6" mask form factors or necessitates the use of larger masks sizes. Small fields lead to a need for stitching or accepting substantially reduced throughput - a problem for a technology already challenged with respect to cost-of-ownership. The implementation of larger mask formats is straightforward but requires considerable investments in new tools for mask making. New absorbers may provide a solution for high-NA EUV lithography at 4× lens reduction, but much R&D is required to demonstrate that this approach will work.

Citation Download Citation

Harry J. Levinson, Pawitter Mangat, Thomas Wallow, Lei Sun, Paul Ackmann, and Sheldon Meyers "Considerations for high-numerical aperture EUV lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867916 (1 April 2013); https://doi.org/10.1117/12.2015829

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