Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport

Gerard Perrier; Robert Philippe; Jean-Pol Dodelet

doi:10.1117/12.947373

15 August 1988 Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport

Gerard Perrier, Robert Philippe, Jean-Pol Dodelet

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947373
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The Close Spaced Vapor Transport has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. After a presentation of the technique involved in the growth, scanning electron microscopy and X-rays diffractometry studies show that the deposit is mainly cubic ZnSe with a slight contribution of hexagonal ZnSe. The influence of the deposition conditions on the growth rate is reported, and the two existing models are presented.

Citation Download Citation

Gerard Perrier, Robert Philippe, and Jean-Pol Dodelet "Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947373

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