MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors

Nikolas L. Dmitruk; Olga Yu. Borkovskaya; Olga I. Mayeva; Sergey V. Mamikin; Oxana B. Yastrubchak

doi:10.1117/12.271172

15 April 1997 MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors

Nikolas L. Dmitruk, Olga Yu. Borkovskaya, Olga I. Mayeva, Sergey V. Mamikin, Oxana B. Yastrubchak

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271172
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The results of investigation for two types of GaAs(InP) based MSM photodetectors are described: 1) on quasiperiodical surfaces as light radiation detectors with enhanced photosensitivity throughout the spectral sensitivity range of device; 2) on holographic gratings as detectors having selective sensitivity respect to wavelength, polarization and incidence angle of light. The electrophysical parameters of Au(Ag)-GaAs(InP) MSM- photodetectors - current transport mechanism, interface recombination velocity, minority carrier diffusion length etc. - the spectral, angular, and polarization characteristics of their photosensitivity have been determined. Surface plasmon polariton excitation is shown to be an additional mechanism of photosensitivity enhancement for MSM photodetectors with corrugated surface. The passivation of corrugated surfaces in aqueous solution of sulfides was used for further improvement of photodetector sensitivity. The optimum regimes of chemical processing of texturation and passivation have been determined.

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Nikolas L. Dmitruk, Olga Yu. Borkovskaya, Olga I. Mayeva, Sergey V. Mamikin, and Oxana B. Yastrubchak "MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271172

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