Quantum dot active regions for extended-wavelength (1.0 um to 1.3 um) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers

Diana L. Huffaker; Gyoungwon Park; Z. Zou; Oleg B. Shchekin; Dennis G. Deppe

doi:10.1117/12.369385

9 November 1999 Quantum dot active regions for extended-wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers

Diana L. Huffaker, Gyoungwon Park, Z. Zou, Oleg B. Shchekin, Dennis G. Deppe

Author Affiliations +

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369385
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

In this paper we discuss crystal growth, spontaneous emission characteristics and low threshold performance of 1.3 micrometers InGaAs/GaAs quantum dot heterostructure lasers grown using sub-monolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low threshold current of 1.2 mA and threshold current density of 19 A/cm² under continuous-wave room-temperature operation. At 4 K a remarkably low threshold current density of 6 A/cm² is obtained. We also discuss ground state lasing at (lambda) equals 1.07 micrometers of a vertical cavity surface emitting laser in which a stacked and high dot density active region has been incorporated. The high QD density active region is achieved using alternating monolayers of InAs and GaAs. Lasing threshold conditions and gain parameters for a ground state quantum dot vertical cavity laser are also analyzed.

Citation Download Citation

Diana L. Huffaker, Gyoungwon Park, Z. Zou, Oleg B. Shchekin, and Dennis G. Deppe "Quantum dot active regions for extended-wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369385

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