GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 &#956;m

Mathilde Gobet; Hopil P. Bae; Tomas Sarmiento; James S. Harris

doi:10.1117/12.762311

1 February 2008 GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

Mathilde Gobet, Hopil P. Bae, Tomas Sarmiento, James S. Harris

Author Affiliations +

Proceedings Volume 6908, Vertical-Cavity Surface-Emitting Lasers XII; 69080N (2008) https://doi.org/10.1117/12.762311
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

Citation Download Citation

Mathilde Gobet, Hopil P. Bae, Tomas Sarmiento, and James S. Harris "GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm", Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080N (1 February 2008); https://doi.org/10.1117/12.762311

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