40 Gb/s InGaAlAs EML module based on identical epitaxial layer integration scheme

Changzheng Sun; Bing Xiong; Jian Wang; Pengfei Cai; Jianming Xu; Qiwei Zhou; He Yuan; Yi Luo

doi:10.1117/12.807172

18 November 2008 40 Gb/s InGaAlAs EML module based on identical epitaxial layer integration scheme

Changzheng Sun, Bing Xiong, Jian Wang, Pengfei Cai, Jianming Xu, Qiwei Zhou, He Yuan, Yi Luo

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351P (2008) https://doi.org/10.1117/12.807172
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on identical epitaxial layer (IEL) integration scheme are developed for 40 Gb/s optical fiber communication systems. The electroabsorption modulator (EAM) section adopts a narrow high-mesa waveguide formed by inductively coupled plasma (ICP) dry etching technique, and a self-aligned planarization technique is employed to further reduce the device capacitance. Resonances are observed in the small signal modulation response of the packaged EML module, which are attributed to parallel-plate modes of the coplanar waveguide (CPW) transmission line used for modulation signal feeding and the residual reflection at the modulator facet, respectively. The influence of such resonances on the large signal eyediagram performance of the device is studied, and methods for their suppression are presented. Clear eye opening under 40 Gb/s non-return-to-zero (NRZ) modulation has been demonstrated for the optimized EML module.

Citation Download Citation

Changzheng Sun, Bing Xiong, Jian Wang, Pengfei Cai, Jianming Xu, Qiwei Zhou, He Yuan, and Yi Luo "40 Gb/s InGaAlAs EML module based on identical epitaxial layer integration scheme", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351P (18 November 2008); https://doi.org/10.1117/12.807172

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