Investigation of optically injected charge carrier dynamics in silicon wafers using terahertz spectroscopic imaging

Thomas Arnold; Martin De Biasio; Wolfgang Muehleisen; Raimund Leitner

doi:10.1117/12.919061

22 May 2012 Investigation of optically injected charge carrier dynamics in silicon wafers using terahertz spectroscopic imaging

Thomas Arnold, Martin De Biasio, Wolfgang Muehleisen, Raimund Leitner

Author Affiliations +

Proceedings Volume 8374, Next-Generation Spectroscopic Technologies V; 837407 (2012) https://doi.org/10.1117/12.919061
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Terahertz (THz) time-domain spectroscopy has proven to be a promising technology for a wide range of applications, such as inspection of nished products or materials, quality control, biomedical imaging and diagnostics, counterfeit detection and characterization of semiconductors. This paper investigates the applicability of THz time-domain spectroscopy for the characterization of silicon solar cell properties such as: conductivity, charge carrier mobility and density. Moreover, the possibilities for THz spectroscopy and imaging for the defect analysis in semiconductor and photovoltaic materials are investigated. THz-pump/THz-probe measurements were carried out on silicon wafers which were illuminated by a halogen light source to inject free charge carriers. Initial results indicate that THz time-domain spectroscopy is a promising technique for the characterization of silicon wafers for the photovoltaic industry.

Citation Download Citation

Thomas Arnold, Martin De Biasio, Wolfgang Muehleisen, and Raimund Leitner "Investigation of optically injected charge carrier dynamics in silicon wafers using terahertz spectroscopic imaging", Proc. SPIE 8374, Next-Generation Spectroscopic Technologies V, 837407 (22 May 2012); https://doi.org/10.1117/12.919061

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